کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1792647 | 1023653 | 2011 | 6 صفحه PDF | دانلود رایگان |
We investigate the growth conditions for lattice-matched InGaAs/InAlAs/InP quantum cascade lasers (QCLs) by metalorganic chemical vapor deposition (MOCVD). Effect of substrate misorientation, growth temperature, and V/III ratios of InGaAs and InAlAs layers on the surface morphology, optical quality, and impurity incorporation were systematically studied. It was found that epitaxial layers and multi-quantum-well structures grown at 720 °C with V/III ratios of 116 for InGaAs and 21 for InAlAs on InP substrates with an off-cut angle of ∼0.06° exhibit a stable step-flow growth and low oxygen and carbon contamination. Using these conditions, a ∼11.3-μm-thick QCL with an emission wavelength at ∼9.2 μm was grown and fabricated, which demonstrated excellent structural quality and operated at room temperature in pulsed mode with a threshold current density of 2.0 kA/cm2 and a slope efficiency of 550 mW/A.
Journal: Journal of Crystal Growth - Volume 316, Issue 1, 1 February 2011, Pages 75–80