کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8150074 1524404 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 µm
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 µm
چکیده انگلیسی
The effects of well widths and well numbers of InGaAs triangular quantum well lasers in 2.30-2.44 μm range using antimony-free material system on InP substrates are investigated. The triangular quantum well was equivalently formed by using gas source molecular beam epitaxy grown InAs/In0.53Ga0.47As digital alloy and the pseudomorphic growth was confirmed by the X-ray diffraction measurements. Lasing at 2.30 μm above 330 K under continuous wave operation has been achieved for the laser with four 13 nm quantum wells. By increasing the well width to 19 nm, the continuous wave wavelength has been extended to 2.44 μm at 290 K, whereas the epitaxial quality and laser performances are deteriorated. For those lasers with well width up to 19 nm, the moderate reduction of the quantum well numbers can restrict the strain accumulation and improve the laser performances. Continuous wave lasing at 2.38 μm above 300 K has been achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 425, 1 September 2015, Pages 376-380
نویسندگان
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