Keywords: B1 آرسنات; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Arsenates; B2. Semiconducting III-V materials; B3. Infrared devices;
مقالات ISI B1 آرسنات (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: B1 آرسنات; A2. Growth from high temperature solutions; B2. Superconducting materials; B1. Arsenates; A1. Solubility; A1. Diffusion;
Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides
Keywords: B1 آرسنات; B3. Laser diodes; B2. Semiconducting III-V materials; A3. Molecular beam epitaxy; B1. Arsenates;
Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 µm
Keywords: B1 آرسنات; A3. Molecular beam epitaxy; B1. Arsenates; B2. Semiconducting III-V materials; B3. Laser diodes;
Zn-doping of GaAs nanowires grown by Aerotaxy
Keywords: B1 آرسنات; A1. Nanostructures; A3. Metalorganic vapour phase epitaxy; B1. Arsenates; B1. Gallium compounds; B1. Nanomaterials; B2. Semiconducting III-V materials;
Hydrothermal growth of large piezoelectric single crystals of GaAsO4
Keywords: B1 آرسنات; A1. Solubility; A1. Hydrothermal crystal growth; A1. Single crystal growth; A2. Growth from solutions; B1. Arsenates; B2. Piezoelectric materials;
InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 μm-emitting quantum-cascade-laser active regions
Keywords: B1 آرسنات; A3. Metalorganic vapor phase epitaxy; B1. Arsenates; B1. Phosphides; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices;
Bandgap engineering of 1.3 μm quantum dot structures for terahertz (THz) emission
Keywords: B1 آرسنات; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Arsenates; B1. Nanomaterials; B2. Semiconducting III-V materials;
Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots
Keywords: B1 آرسنات; A1. Nanostructures; A3. Organometallic vapour phase epitaxy; B1. Arsenates; B2. Semiconducting III–V materials
Optical microcavities fabricated by DBR overgrowth of pyramidal-shaped GaAs mesas
Keywords: B1 آرسنات; A1. Optical microscopy; A1. Etching; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Arsenates; B2. Semiconducting III–V materials
Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor-liquid-solid grown GaAs nanowires
Keywords: B1 آرسنات; A1. High-resolution electron transmission microscopy; A1. Nanostructures; A3. Metalorganic vapor-phase epitaxy; B1. Arsenates; B1. Gallium compounds; B2. Semiconducting III-V materials;
Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature
Keywords: B1 آرسنات; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Arsenates; B1. Nanomaterials; B2. Semiconducting III-V materials;
Long wavelength infrared detection using amorphous InSb and InAs0.3Sb0.7
Keywords: B1 آرسنات; A3. Polycrystalline deposition; B1. Antimonides; B1. Arsenates; B2. Semiconducting ternary compounds; B3. Infrared devices;
Photovoltaic characteristics of InAs/InGaAs/GaAs QD heterostructures
Keywords: B1 آرسنات; 68.65.Hb; 72.40.+wA1. Nanostructures; A3. Molecular beam epitaxy; B1. Arsenates; B1. Nanomaterials; B2. Semiconducting III-V materials; B3. Solar cells
Improving size distribution of InAs quantum dots for intersubband devices
Keywords: B1 آرسنات; 81.07.Ta; 68.55.ag; 81.15.Hi; 81.16.Dn; 73.21.La; 78.67.Hc; A1. Low-dimensional structures; A1. Nanostructures; A1. Surface structure; A3. Molecular beam epitaxy; B1. Arsenates; B2. Semiconducting III-V materials;
Study of the molecular beam epitaxial growth of InAs on Si-covered GaAs(1Â 0Â 0) substrates
Keywords: B1 آرسنات; 68.47.Fg; 68.55.Ac; 68.65.Hb; 68.37.Ps; 81.05.Ea; 81.15.Hi; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Arsenates; B2. Semiconducting III-V materials;
Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxy
Keywords: B1 آرسنات; 81.05.Ea; 81.15.Hi; 81.16.−cA1. Nanostructures; A3. Migration-enhanced epitaxy; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Arsenates; B1. Gallium compounds