کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707265 | 1023644 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature](/preview/png/10707265.png)
چکیده انگلیسی
Bilayer quantum dots (BQDs) are interesting structures for long wavelength emission due to its ability to tune the areal density and dot size separately. However, wide implementation of BQDs is hindered by the complicated growth procedures, which involve two sets of growth rate and temperature for the respective QD layers. We had recently reported the optical properties of the BQDs grown at constant growth rate and temperature [Appl. Phys. Lett. 95 (2009) 181913]. In this work, we investigate the effects of GaAs spacer thickness and InxGa1âxAs strain-reducing layer on the structural and optical properties of such BQDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 167-171
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 167-171
نویسندگان
C.Y. Ngo, S.F. Yoon, H. Tanoto, H.K. Hui, D.R. Lim, Vincent Wong, S.J. Chua,