کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489804 | 1524364 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning](/preview/png/5489804.png)
چکیده انگلیسی
Semiconductor laser diodes (LD) were demonstrated employing a strained (In)GaAs quantum dot (QD) active region grown by metalorganic vapor phase epitaxy (MOVPE) on nominally exact (1Â 0Â 0) GaAs substrates using selective area epitaxy (SAE). The SAE QD growth employed a SiNx nano-patterned mask defined by diblock copolymer (BCP) lithography. In-situ etching using carbon tetrabromide (CBr4), prior to the SAE of the QDs, was shown to be effective to remove the processing-related damage introduced during the nanopattern transfer process, resulting in a significant reduction in the threshold current density of the LD under the optimal in-situ etching condition. Furthermore, the modal optical gain parameter and the transparency current density were extracted by the conventional cavity length analysis (CLA) on LD devices where the QD was grown with the optimal in-situ etching condition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 465, 1 May 2017, Pages 48-54
Journal: Journal of Crystal Growth - Volume 465, 1 May 2017, Pages 48-54
نویسندگان
Honghyuk Kim, Jonathan Choi, Zachary Lingley, Miles Brodie, Yongkun Sin, Thomas F. Kuech, Padma Gopalan, Luke J. Mawst,