Keywords: A3 اپیتاکسی انتخابی; A3. Selective epitaxy; B2. Semiconducting silicon; A1. Surface processes; A1. Density functional theory calculation; A1. Thermodynamic calculation;
مقالات ISI ترجمه شده A3 اپیتاکسی انتخابی
مقالات ISI A3 اپیتاکسی انتخابی (ترجمه نشده)
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Keywords: A3 اپیتاکسی انتخابی; A1. Growth models; A1. Heat transfer; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting materials;
Keywords: A3 اپیتاکسی انتخابی; A1. Low dimensional structures; A3. Molecular Beam Epitaxy; A3. Selective epitaxy; B2. Semiconducting III-V materials;
Keywords: A3 اپیتاکسی انتخابی; A1. High resolution x-ray diffraction; A1. Nanobeam electron diffraction; A1. Stresses; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting germanium
Keywords: A3 اپیتاکسی انتخابی; A3. Low press. Metalorganic vapour phase epitaxy; A3. Selective epitaxy; B1. Gallium compounds; B1. Nanomaterials; B2. Semiconducting III-V materials;
Selective-area growth of pulse-doped InAs nanowires on Si and vertical transistor application
Keywords: A3 اپیتاکسی انتخابی; A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nanomaterials; B3. Field effect transistors;
Mesa orientation dependence of lateral growth of GaN microchannel epitaxy by electric liquid-phase epitaxy using a mesa-shaped substrate
Keywords: A3 اپیتاکسی انتخابی; A3. Liquid phase epitaxy; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; A1. Crystal morphology;
Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet Epitaxy
Keywords: A3 اپیتاکسی انتخابی; A3. Molecular beam epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide; A1. Low dimensional structures;
Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy
Keywords: A3 اپیتاکسی انتخابی; A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nanomaterials; B2. Semiconducting germanium; B2. Semiconducting III-V materials;
The process of growing Cr2O3 thin films on α-Al2O3 substrates at low temperature by r.f. magnetron sputtering
Keywords: A3 اپیتاکسی انتخابی; A1. Crystallites; A1. Defects; A1. X-ray diffraction; A3. Sapphire; A3. Physical vapor deposition processes; A3. Selective epitaxy;
Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning
Keywords: A3 اپیتاکسی انتخابی; A3. Metalorganic vapor phase epitaxy; A1. Nanostructures; A3. Selective epitaxy; A1. Etching; B3. Laser diodes;
Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates
Keywords: A3 اپیتاکسی انتخابی; B1. Nitrides; A3. Molecular beam epitaxy; A3. Selective epitaxy; A1. Substrates; B1. Sapphire; A1. Nanostructures;
Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer
Keywords: A3 اپیتاکسی انتخابی; A1. Nanostructures; A1. Pre-orienting layer; A3. Selective epitaxy; A3 Metal-organic chemical vapor deposition; B1. Hafnium; B2. Semiconducting gallium compounds;
High-quality Ga-rich AlGaN grown on trapezoidal patterned GaN template using super-short period AlN/GaN superlattices for rapid coalescence
Keywords: A3 اپیتاکسی انتخابی; A1. Defect; A3. Selective epitaxy; A3. Metalorganic chemical vapor deposition; A3. Superlattices; B2. Semiconducting III-V materials;
Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes
Keywords: A3 اپیتاکسی انتخابی; A1. Defects; A3. Metalorganic chemical vapour epitaxy; A3. Pendeoepitaxy; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Orientational control of CeO2 films on sapphire substrates grown by magnetron sputtering
Keywords: A3 اپیتاکسی انتخابی; A1. Atomic force microscopy; A1. X-ray diffraction; A3. Selective epitaxy; B1. Oxides; B1. Sapphire;
Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates
Keywords: A3 اپیتاکسی انتخابی; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III-V materials; B1. Nitrides; A1. Microstructures; A3. Selective epitaxy; A1. Non-polar crystal structure
Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon
Keywords: A3 اپیتاکسی انتخابی; A1. Defects; A1. Stresses; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B2. Semiconducting III–V materials; B2. Semiconducting gallium arsenide
In-line correlation and ordering of InAs/GaAs multistacked Quantum Dots structures
Keywords: A3 اپیتاکسی انتخابی; A1. Low dimensional structures; A1. Stresses; A3. Selective epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials
Growth of wurtzite GaP in InP/GaP core–shell nanowires by selective-area MOVPE
Keywords: A3 اپیتاکسی انتخابی; A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nanomaterials; B2. Semiconducting III–V materials
Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth
Keywords: A3 اپیتاکسی انتخابی; A2. Growth from solutions; A2. Natural crystal growth; A2. Single crystal growth; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2
Keywords: A3 اپیتاکسی انتخابی; A1. Mass transport; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B1. Nitrides;
Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications
Keywords: A3 اپیتاکسی انتخابی; A1. Nanostructures; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B1. InGaN; B2. Semiconducting III-V materials;
Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates
Keywords: A3 اپیتاکسی انتخابی; A1. Stresses; A1. Nanobeam electron diffraction; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting gallium arsenide
Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE)
Keywords: A3 اپیتاکسی انتخابی; A1. Defects; A3. Metalorganic molecular beam epitaxy; A3. Selective epitaxy; B1. Nitride; B2. Semiconducting gallium compound;
Growth rate for the selective epitaxial growth of III-V compounds inside submicron shallow-trench-isolation trenches on Si (001) substrates by MOVPE: Modeling and experiments
Keywords: A3 اپیتاکسی انتخابی; A1. Growth models; A3. Metal-organic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III-V materials;
Growth of InGaN/GaN core–shell structures on selectively etched GaN rods by molecular beam epitaxy
Keywords: A3 اپیتاکسی انتخابی; A1. Etching; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults
Keywords: A3 اپیتاکسی انتخابی; A1. Crystal morphology; A1. Defects; A3. Metal organic chemical vapor deposition; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Site-controlled growth of single GaN quantum dots in nanowires by MOCVD
Keywords: A3 اپیتاکسی انتخابی; A1. Nanostructures; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B2. GaN quantum dots
Self-assembly of Ga droplets attached to GaAs quantum dots
Keywords: A3 اپیتاکسی انتخابی; A1. Low dimensional structures; A3. Molecular beam epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide
Growth of cubic GaN on 3C–SiC/Si (001) nanostructures
Keywords: A3 اپیتاکسی انتخابی; A1. Nanostructures; A1. Planar defects; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Nitrides
Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy
Keywords: A3 اپیتاکسی انتخابی; A3. Metalorganic molecular beam epitaxy; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; B2. Semiconducting III–V materials
GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures
Keywords: A3 اپیتاکسی انتخابی; A3. Selective epitaxy; A3. Semipolar quantum wells; B1. Nitrides; B3. Light emitting diodes
Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates
Keywords: A3 اپیتاکسی انتخابی; A1. Defects; A1. Etching; A3. MOCVD; A3. Selective epitaxy; B1. Nitrides
Selective epitaxial growth of GaAs by current controlled liquid phase epitaxy
Keywords: A3 اپیتاکسی انتخابی; A1. Electromigration; A3. Current controlled liquid phase epitaxy; A3. Liquid phase epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide
Two-step lateral growth of GaN for improved emission from blue light-emitting diodes
Keywords: A3 اپیتاکسی انتخابی; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B1. Nitrides; B1. Sapphire; B2. Dielectric materials; B3. Light emitting diodes
Site-controlled growth of indium nitride based nanostructures using metalorganic vapour phase epitaxy
Keywords: A3 اپیتاکسی انتخابی; A1. Crystal morphology; A1. Nanostructures; A1. Photoluminescence; A3. Metalorganic vapour phase epitaxy; A3. Selective epitaxy; B1. Indium nitride;
AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN
Keywords: A3 اپیتاکسی انتخابی; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nitrides; B3. DBRs
Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
Keywords: A3 اپیتاکسی انتخابی; A3. Hot-wall epitaxy; A3. Metal−organic vapor phase epitaxy; A3. Selective epitaxy; B1. Nitrides
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
Keywords: A3 اپیتاکسی انتخابی; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Nitrides
Selective-area growth of thin GaN nanowires by MOCVD
Keywords: A3 اپیتاکسی انتخابی; A1. Nanowires; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B2. GaN
Influence of growth temperature on growth of InGaAs nanowires in selective-area metal–organic vapor-phase epitaxy
Keywords: A3 اپیتاکسی انتخابی; A1. Nanostructures; A3. Metal–organic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III–V materials; B2. Semiconducting ternary compounds
Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors
Keywords: A3 اپیتاکسی انتخابی; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Selective epitaxy; B2. Semiconducting III-V materials; B3. Field effect transistors;
InAs nanowire growth on oxide-masked 〈111〉 silicon
Keywords: A3 اپیتاکسی انتخابی; A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III–V materials; B2. Semiconducting silicon
Growth evolution and microstructural characterization of semipolar (112̄2) GaN selectively grown on etched r-plane sapphire
Keywords: A3 اپیتاکسی انتخابی; A1. High resolution x-ray diffraction; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Demonstration of crystal-vapor equilibrium leading to growth blockade of GaN during selective area growth
Keywords: A3 اپیتاکسی انتخابی; A1. Crystal morphology; A1. Growth models; A3. Hydride Vapor Phase Epitaxy; A3. Selective epitaxy; B1. Nitrides;
Phase-field simulations of GaN/InGaN quantum dot growth by selective area epitaxy
Keywords: A3 اپیتاکسی انتخابی; A1. Computer simulation; A1. Crystal morphology; A1. Nanostructures; A3. Selective epitaxy; B2. Semiconducting gallium compounds
Lattice-mismatched InGaAs nanowires formed on GaAs(1 1 1)B by selective-area MOVPE
Keywords: A3 اپیتاکسی انتخابی; A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nanomaterials; B2. Semiconducting III–V materials
The structural and optical properties of selectively grown a-plane GaN with LT-GaN and HT-AlN buffer layers
Keywords: A3 اپیتاکسی انتخابی; A3. Selective epitaxy; A3. Quantum wells; A3. Metalorganic chemical vapor deposition; B1. Nitride; B2. Semiconducting III-V materials;
Crystallization of amorphous InAs/GaAs films on GaAs
Keywords: A3 اپیتاکسی انتخابی; A1. Recrystallization; A3. Molecular beam epitaxy; A3. Quantum wells; A3. Selective epitaxy; B2. Semiconductor III-V materials;