Growth of cubic GaN on 3C–SiC/Si (001) nanostructures

We report on the molecular beam epitaxy growth of cubic GaN on 3C–SiC (001) nanostructures. Transmission electron microscopy (TEM) studies show phase-pure cubic GaN crystals with a low defect density on top of the post shaped 3C–SiC nanostructures and GaN grown on their sidewalls, which is dominated by {111} planar defects. The nanostructures, aligned parallel and perpendicular to the [110] directions of the substrate, are located in anti-phase domains of the 3C–SiC/Si (001) substrate. These anti-phase domains strongly influence the optimum growth of GaN layers in these regions. TEM measurements demonstrate a different stacking fault density in the cubic GaN epilayer in these areas.

► MBE growth of phase-pure cubic GaN on 3C–SiC/Si (001) nanostructures.
► Nearly defect-free cubic GaN with excellent structural properties.
► Different stacking fault density in adjoining anti-phase domains in cubic GaN.