Keywords: A1 نقص های پلانار; A1. Computer simulation; A1. Directional solidification; A1. Planar defects; A1. Nucleation; B2. Semiconducting silicon;
مقالات ISI A1 نقص های پلانار (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: A1 نقص های پلانار; 00-01; 99-00; A1. Defects; A1. Impurities; A1.Surface structure; A1. Planar defects; A1. Segregation; B3. Solar cells;
Keywords: A1 نقص های پلانار; A1. Nucleation; A1. Planar defects; A1. Twinning; A1. Multi-layer model; B2. Semiconducting silicon;
Keywords: A1 نقص های پلانار; A1. Nucleation; A1. Planar defects; A1. Solidification; B2. Semiconducting silicon
Keywords: A1 نقص های پلانار; A1. Planar defects; A1. Solidification; A2. Growth from melt; B2. Semiconducting silicon; Grain boundaries
Keywords: A1 نقص های پلانار; A1. Growth models; A1. Planar defects; A1. Grain structure; A1. Numerical modeling; B2. Semiconducting silicon; B3. Solar cells;
Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)
Keywords: A1 نقص های پلانار; A1. Planar defects; A3. Metalorganic chemical vapor deposition; B2. Semiconducting gallium arsenide; B2. Semiconducting III-V materials;
Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy
Keywords: A1 نقص های پلانار; A1. Nanostructures; A1. Planar defects; A3. Pendeoepitaxy; B1. Nitrides; B2. Semiconducting indium compounds
Microstructure evaluation of nanocrystalline MgO powders using the advanced X-ray line profile analysis
Keywords: A1 نقص های پلانار; A1. Dislocation density; A1. Planar defects; A1. SEM; A1. X-ray line profile analysis; B1. MgO nanopowders
Microstructure of striae in ã04¯41ã-oriented lithium niobate single crystal grown by Czochralski method
Keywords: A1 نقص های پلانار; A1. Planar defects; A1. Line defects; A2. Czochralski method; B1. Lithium compounds; B1. Niobates;
Effect of nitrogen impurity on the dislocation structure of large HPHT synthetic diamond crystals
Keywords: A1 نقص های پلانار; A1. Etching; A1. Line defects; A1. Planar defects; A2. Single crystal growth; B1. Diamond;
The effect of structural vacancies on the twins in defect zinc-blende crystal Hg3In2Te6 grown by Bridgman method
Keywords: A1 نقص های پلانار; A1. Planar defects; A1. Point defects; A2. Bridgman technique; B2. Semiconducting mercury compounds; B2. Semiconducting ternary compounds;
Synchrotron topography studies of the operation of double-ended Frank-Read partial dislocation sources in 4H-SiC
Keywords: A1 نقص های پلانار; A1. Line defects; A1. Planar defects; A1. X-ray topography; A2. Growth from vapor; B2. Semiconducting silicon compounds;
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster
Keywords: A1 نقص های پلانار; A1. Crystal structure; A1. Planar defects; A1. X-ray diffraction; A3. Chemical vapor deposition processes; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting silicon;
Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates
Keywords: A1 نقص های پلانار; A1. Micro-twins; A1. Planar defects; A1. Synchrotron; A1. X-ray diffraction; A3. Molecular Beam Epitaxy; B2. Semiconducting III–V materials
Growth of cubic GaN on 3C–SiC/Si (001) nanostructures
Keywords: A1 نقص های پلانار; A1. Nanostructures; A1. Planar defects; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Nitrides
Epitaxial growth of InGaAs on MgAl2O4 spinel for one-sun photovoltaics
Keywords: A1 نقص های پلانار; A1. Planar defects; A1. Substrates; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; B3. Solar cells
Growth and properties of self-assembled InP-nanoneedles on (0Â 0Â 1) InP by gas source MBE
Keywords: A1 نقص های پلانار; A1. Low dimensional structures; A1. Planar defects; A3. Molecular beam epitaxy; B2. Semiconducting indium phosphide;
Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal-organic chemical vapor deposition
Keywords: A1 نقص های پلانار; A1. Cathodoluminescence; A1. Planar defects; A1. Transmission electron microscopy; A3. Metalorganic vapor phase epitaxy; B1. Nitrides;
Defects in Ge epitaxy in trench patterned SiO2 on Si and Ge substrates
Keywords: A1 نقص های پلانار; A1. Planar defects; A1. Stresses; A3. Epitaxial lateral overgrowth; A3. Selective growth; B1. Semiconducting germanium; B1. Semiconducting silicon;
Effect of vicinal off-cut substrates on the basal stacking fault density in nonpolar a-GaN epilayers
Keywords: A1 نقص های پلانار; A1. Planar defects; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Effects of substrate orientation on aluminum grown on MgAl2O4 spinel using molecular beam epitaxy
Keywords: A1 نقص های پلانار; A1. Planar defects; A3. Molecular beam epitaxy; B1. Metals; B1. Oxides
Polytype formation in GaAs/GaP axial nanowire heterostructures
Keywords: A1 نقص های پلانار; A1. Crystal structure; A1. Nanostructures; A1. Planar defects; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; B1. Nanowire
Growth and structural characterization of intrinsic, acceptor, and donor doped (Mg,Zn)O epilayers via metalorganic vapor phase epitaxy on (1 0 1¯ 0) ZnO substrates
Keywords: A1 نقص های پلانار; A1. Doping; A1. Planar defects; A1. X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. MgxZn1âxO; B1. ZnO;
Crystal growth and perfection of large octahedral synthetic diamonds
Keywords: A1 نقص های پلانار; A1. Etching; A1. Line defects; A1. Planar defects; A2. Single crystal growth; B1. Diamond
Metastable rocksalt ZnO interfacial layer and its influence on polarity selection of Zn-polar ZnO films
Keywords: A1 نقص های پلانار; 61.14.Hg; 68.37.Lp; 68.35.Ct; 68.35.RhA1. Interface; A1. Metastable structure; A1. Planar defects; A1. Phase equilibrium; A3. Molecular beam epitaxy
Anisotropic strain relaxation and abnormal zigzag shape planar defects in nonpolar a-GaN grown by metalorganic chemical vapor deposition
Keywords: A1 نقص های پلانار; A1. Crystal structure; A1. Planar defects; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials
Aragonite twinning in gastropod nacre
Keywords: A1 نقص های پلانار; A1. Biomaterials; A1. Crystal morphology; A1. Planar defects; B1. Calcium compounds
Extended defects in bulk GaN and III-nitrides grown on this substrate
Keywords: A1 نقص های پلانار; A1. Line defects; A1. Planar defects; A2. Growth from solution; B1. Nitrides; B2. Semiconducting III-V materials
Characterization of the carrot defect in 4H-SiC epitaxial layers
Keywords: A1 نقص های پلانار; A1. Epitaxial defects; A1. Carrot defect; A1. Line defects; A1. Planar defects; A1. X-ray topography; A1. KOH etching;
Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers
Keywords: A1 نقص های پلانار; 61.05.cp; 61.72.Dd; 61.72.Lk; 61.72.Nn; 81.05.Ea; 81.15.GhA1. Crystal structure; A1. Line defects; A1. Planar defects; A3. Metalorganic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Epitaxial lateral overgrowth on (2 1¯ 1¯ 0) a-plane GaN with [0 1¯ 1 1]-oriented stripes
Keywords: A1 نقص های پلانار; 61.05.cp; 61.72.Hh; 61.72.Nn; 78.55.Cr; 81.15.Kk; 81.65.Cf; A1. Line defects; A1. Optical spectroscopy; A1. Planar defects; A3. Metalorganic vapor-phase epitaxy; A3. Selective epitaxy; B1. Nitrides;
Formation of metastable MgO structures on type-III oxide surfaces: Effect of periodic out-of-plane electric dipole moment of substrates
Keywords: A1 نقص های پلانار; 68.47.Gh; 68.35.Rh; 61.72.Nn; 68.35.Ct; A1. Interface; A1. Metastable structure; A1. Phase equilibrium; A1. Planar defects; A3. Molecular beam epitaxy; B1. MgO;
Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition
Keywords: A1 نقص های پلانار; 61.72.Nn; 68.55.−A; 68.55.−J; 81.05.Ea; 81.15.Gh; 61.05.cpA1. Morphology; A1. Planar defects; A1. X-ray diffraction; A3. Metalorganic chemical vapor deposition; B2. Semiconducting gallium nitride; B2. Nonpolar
Electron backscatter diffraction of a Ge growth tip from a vertical gradient freeze furnace
Keywords: A1 نقص های پلانار; 81.30.Fb; 61.72.MmA1. Characterization; A1. Defects; A1. Planar defects; A1. Solidification; A2. Bridgman technique; B2. Semiconducting germanium
Sr4Ru2O9 films grown by pulsed laser deposition
Keywords: A1 نقص های پلانار; 68.37.Lp; 68.47.gh; 81.15.Fg; A1. Planar defects; A1. Crystal morphology; A3. Physical vapour deposition process; B1. Oxides;
Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth
Keywords: A1 نقص های پلانار; 61.72.FfA1. Characterization; A1. Line defects; A1. Planar defects; A3. Vapor phase epitaxy; B1. Silicon carbide; B2. Semiconducting materials
Condensation, crystallization and coalescence of amorphous Al2O3 nanoparticles
Keywords: A1 نقص های پلانار; 61.14.−x; 64.70.Dv; 05.40.Jc; 61.46.Df; 81.40.GhA1. Crystallites; A1. Growth models; A1. Nucleation; A1. Planar defects; A1. Solidification; B1. Oxides
Revealing of planar defects and partial dislocations in large synthetic diamond crystals by the selective etching
Keywords: A1 نقص های پلانار; 81.05.Uw; 61.72.Ff; 61.72Lk; 61.72.NnA1. Line defects; A1.Etching; A1. Planar defects; B1. Diamond
Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching
Keywords: A1 نقص های پلانار; 61.72.FfA1. Characterization; A1. Line defects; A1. Planar defects; A3. Vapor phase epitaxy; B1. Silicon carbide; B2. Semiconducting materials
Reductions of twin and protrusion in 3C-SiC heteroepitaxial growth on Si(1Â 0Â 0)
Keywords: A1 نقص های پلانار; 61.72.Mm; 61.14.Hg; 81.15.Gh; 81.10.Aj; 81.05.Je; A1. Crystal morphology; A1. Growth models; A1. Planar defects; A1. Reflection high-energy electron diffraction; A3. Chemical vapor deposition process; B2. Semiconducting silicon compounds;
Dependence of stacking fault and twin densities on deposition conditions during 3C-SiC heteroepitaxial growth on on-axis Si(0 0 1) substrates
Keywords: A1 نقص های پلانار; 61.72.Mm; 61.72.Nn; 81.05.Je; 81.10Aj; 81.15.GhAl. Crystal morphology; A1. Growth models; A1. Planar defects; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds
Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers
Keywords: A1 نقص های پلانار; 61.72.Ff; 61.72.Nn; A1. Etching; A1. Planar defects; B1. Gallium nitride;