کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1793278 | 1023671 | 2009 | 6 صفحه PDF | دانلود رایگان |
This paper reports a study of the effect of NH3 flow rate on m-plane GaN growth on m-plane SiC with an AlN buffer layer. It is found that a reduced NH3 flow rate during m-plane GaN growth can greatly improve the recovery of in situ optical reflectance and the surface morphology, and narrow down the on-axis (1 0 1¯ 0) X-ray rocking curve (XRC) measured along the in-plane a-axis. The surface striation along the in-plane a-axis, a result of GaN island coalescence along the in-plane c-axis, strongly depends on the NH3 flow rate, an observation consistent with our recent study of kinetic Wulff plots. The pronounced broadening of the (1 0 1¯ 0) XRC measured along the c-axis is attributed to the limited lateral coherence length of GaN domains along the c-axis, due to the presence of a high density of basal-plane stacking faults, most of which are formed at the GaN/AlN interface, according to transmission electron microscopy.
Journal: Journal of Crystal Growth - Volume 311, Issue 15, 15 July 2009, Pages 3824–3829