کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148350 | 1524330 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Selective-area growth of pulse-doped InAs nanowires on Si and vertical transistor application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Selective-area growth of pulse-doped InAs nanowires on Si and vertical transistor application Selective-area growth of pulse-doped InAs nanowires on Si and vertical transistor application](/preview/png/8148350.png)
چکیده انگلیسی
III-V compound semiconductors are promising channel materials for the future low-power and high-performance transistor because of their high electron/hole mobility. Here, we report on the integration of vertical InAs nanowire (NW)-channels on Si by selective-area metalorganic vapor phase epitaxy (MOVPE) with a pulse doping technique and demonstration of an InAs NW vertical surrounding-gate transistors. The device had a small subthreshold slope of 68â¯mV/decade, a normalized transconductance of 0.25â¯Î¼S/μm, and on/off ratio of around 107. The axial junction with the pulse doping effectively suppressed off-state leakage current resulting in good electrostatic gate control.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 500, 15 October 2018, Pages 58-62
Journal: Journal of Crystal Growth - Volume 500, 15 October 2018, Pages 58-62
نویسندگان
Hironori Gamo, Katsuhiro Tomioka,