کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792897 | 1023660 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The structural and optical properties of selectively grown a-plane GaN with LT-GaN and HT-AlN buffer layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This study examined the effects of HT-AlN and LT-GaN buffer layers on the optical properties, crystallinity and morphology of 3D a-plane GaN structures with InGaN/GaN MQWs. The 3D a-plane GaN on the HT-AlN buffer layer showed a rough surface and various facets, whereas the 3D a-plane GaN on the LT-GaN buffer layer contained mainly {1 0 1¯ 1} facets that were tilted 25° to the c-axis giving a pyramidal shape. Narrower full-width at half maximum and higher intensity of the cathodoluminescence spectra of 3D a-plane GaN with InGaN/GaN MQWs were observed with the LT-GaN buffer layer. The monochromatic cathodoluminescence images at a specific wavelength showed that the LT-GaN buffer layer can effectively improve the region of 3D a-plane GaN with InGaN/GaN MQWs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 315, Issue 1, 15 January 2011, Pages 174-177
Journal: Journal of Crystal Growth - Volume 315, Issue 1, 15 January 2011, Pages 174-177
نویسندگان
B.K. Kang, S.M. Kang, K.M. Song, D.H. Yoon,