کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707190 | 1023644 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystallization of amorphous InAs/GaAs films on GaAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A novel route based on the structural transition from amorphously deposited material to epitaxial films via thermally induced crystallization is probed for wire formation at side-walls of shallow ridges on patterned GaAs(1 1 3)A substrates. Growth is elaborated on the plane GaAs(0 0 1) and then applied to the patterned GaAs(1 1 3)A substrates. Amorphous layers of InAs and GaAs are deposited by migration-enhanced epitaxy at a growth temperature of Tg=100 °C. Annealing at temperatures between 450 and 550 °C transforms these films into crystalline state. The reported technique facilitates the growth of (In,Ga)As-QWs with high In content and very low interface roughness. Despite strong non-equilibrium conditions during low-temperature deposition, efficient photoluminescence emission is obtained, which is further enhanced by post-growth rapid thermal annealing, concomitant with a controllable spectral blue-shift. The characterization of patterned GaAs(1 1 3)A overgrown with (In,Ga)As attest to the formation of wire-like structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 5-8
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 5-8
نویسندگان
R. Hey, P.V. Santos, E. Luna, T. Flissikowski, U. Jahn,