Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors

► InAs nanowire formation by selective area molecular beam epitaxy. ► In-plane-oriented InAs nanowires were obtained on GaAs (110) plane. ► Directly application of the nanowires to planar nanowire field-effect transistors. ► Output and transfer characteristics of the transistors were measured. ► Almost no temperature influence on field-effect mobility was observed.