Site-controlled growth of indium nitride based nanostructures using metalorganic vapour phase epitaxy

► SA-MOVPE of InN nanostructures on pre-patterned SiO2/GaN/sapphire templates is demonstrated. ► High selectivity is achieved in a small growth temperature range around 650 °C. ► InN nanopyramids evolve from coalesced seeds via cauldron-like structures within mask openings. ► The PL band edge luminescence characteristics depend on the nanostructure growth stage. ► Just fully developed nanopyramids exhibit lowest PL peak energy.