HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

- Smart Cut™ technology is used to obtain GaN-based Advanced Substrates.
- HVPE-GaN crystals were grown on Advanced Substrates.
- HVPE-GaN:Si grown on an Advanced Substrates was used as a substrate for LD.

Advanced Substrates consist of a thin GaN layer bonded to a carrier wafer. The layer is separated from starting material by Smart Cut™ technology. GaN on sapphire Advanced Substrates were successfully used as seeds for HVPE-GaN growth. Unintentionally doped and silicon-doped thick GaN layers were crystallized. The results were compared to HVPE-GaN grown on standard MOCVD-GaN/sapphire templates. Free-standing HVPE-GaN with high free carrier concentration was obtained. A laser diode was built on the n-type doped HVPE-GaN grown on an Advanced Substrate.