Keywords: B1 GaN; A1. Cathodoluminescence; A1. X-ray rocking curve; A2. Ammonothermal growth; B1. GaN;
مقالات ISI B1 GaN (ترجمه نشده)
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Keywords: B1 GaN; B1. Nitrides; A2. Ammonothermal; B1. Molybdenum alloys; B1. GaN; A1. Corrosion; B1. Supercritical ammonia;
Keywords: B1 GaN; A1. Computer simulation; A1. Fluid flow; A3. Multi-wafer HVPE; B1. GaN
An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures
Keywords: B1 GaN; B1. Nitrides; A2. Ammonothermal; A2. Single crystal growth; B1. Molybdenum Alloys; B1. GaN; B1. Supercritical ammonia;
Effects of reaction-kinetic parameters on modeling reaction pathways in GaN MOVPE growth
Keywords: B1 GaN; A1. Growth models; B1. GaN; A3. Gas reactions; A3. Numerical modeling;
Anomalous elongation of c-axis of GaN on Al2O3 grown by MBE using NH3-cluster ions
Keywords: B1 GaN; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B1. GaN; B2. Semiconducting gallium compounds;
Growth of HVPE-GaN on native seeds - numerical simulation based on experimental results
Keywords: B1 GaN; A.1 Stresses; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III-V materials;
The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate
Keywords: B1 GaN; A1. Nucleation; B1. GaN; B1. Patterned sapphire substrate; B3. Annealing
Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates
Keywords: B1 GaN; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III-V materials;
Homoepitaxial growth of HVPE-GaN doped with Si
Keywords: B1 GaN; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III-V materials;
HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cutâ¢
Keywords: B1 GaN; A3. Smart Cutâ¢; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III-V materials; B3. Laser diodes;
Numerical analysis on the origin of thickness unevenness and formation of pits at GaN thin film grown by HVPE
Keywords: B1 GaN; A1. Computer simulation; A1. Fluid flows; A3. Hydride vapor phase epitaxy; B1. GaN;
Termination of hollow core nanopipes in GaN by an AlN interlayer
Keywords: B1 GaN; A1. Nanostructures; A1. TEM; A1. Nanopipes; A3. Metal Organic Vapor Phase Epitaxy; B1. GaN; B2. Semiconducting III-V materials;
Self-assembled growth of inclined GaN nanorods on (10−10) m-plane sapphire using metal–organic chemical vapor deposition
Keywords: B1 GaN; A1. Nanorods; A3. MOCVD; B1. GaN; A1: Self-assembled growth; A1: Catalyst-free; B1: m-Sapphire
Estimation of bowing in hetero-epitaxial GaN-on-sapphire substrate at elevated temperatures by X-ray diffraction rocking curve measurement
Keywords: B1 GaN; A1. Curvature; B1. GaN; Substrate bow; XRD rocking curve;
Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays
Keywords: B1 GaN; A3. Nanoscaled epitaxial lateral overgrowth (NELOG); B1. GaN; B1. Patterned sapphire substrate (PSS); B2. Light-emitting diode (LED);
Ammonothermal growth of GaN on a self-nucleated GaN seed crystal
Keywords: B1 GaN; B1. GaN; Ammonothermal method; Self-nucleated seed; NH4F;
HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties
Keywords: B1 GaN; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III–V materials
Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates
Keywords: B1 GaN; A1. V-defect; A1. Electron channeling contrast imaging (ECCI); A1. Threading dislocation (TD); A3. Multi-quantum wells (MQW); B1. InGaN; B1. GaN
Nanoharvesting of GaN nanowires on Si (211) substrates by plasma-assisted molecular beam epitaxy
Keywords: B1 GaN; A1. Nanostructures; A3. Molecular beam epitaxy; B1. GaN; B2. Semiconducting III-V materials;
HVPE-GaN growth on misoriented ammonothermal GaN seeds
Keywords: B1 GaN; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III-V materials;
Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask
Keywords: B1 GaN; A3. Hydride vapor phase epitaxy; B1. GaN;
Defect states of a-plane GaN grown on r-plane sapphire by controlled integration of silica nano-spheres
Keywords: B1 GaN; A1. Defect States; A1. DLTS; B1. GaN; B1. Silica Nano-Spheres
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
Keywords: B1 GaN; A3. Chemical lift-off; A3. Direct wafer bonding; A3. MOVPE; B1. GaN
Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method
Keywords: B1 GaN; A1. Substrates; A1. X-ray diffraction; A3. Hydride vapor phase epitaxy; B1. GaN;
Study on the effects of AlN interlayer in thick GaN grown on 3C-SiC/Si substrates
Keywords: B1 GaN; A1. Defects; A1. Stress; A3. MOVPE; B1. GaN
GaN growth on Si pillar arrays by metalorganic chemical vapor deposition
Keywords: B1 GaN; A3. Metalorganic chemical vapor deposition; B1. GaN; B1. Nitrides; B1. Si pillar arrays; B2. Semiconducting III–V materials
Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy
Keywords: B1 GaN; A1. QECS; A1. Wulff plot; A3. HVPE; B1. GaN
Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy
Keywords: B1 GaN; A1. Doping; A3. Hydride vapor phase epitaxy; B1. GaN;
The annealing effects of V-doped GaN thin films grown by MOCVD
Keywords: B1 GaN; A3. MOCVD; B1. GaN; B1. Vanadium
Growth of GaN boules via vertical HVPE
Keywords: B1 GaN; A1. Substrates; A2. Single crystal growth; A3. Hydride vapor phase epitaxy; B1. GaN;
Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth
Keywords: B1 GaN; A1. Computer simulation; A1. Diffusion; A1. Molecular dynamics; A2. Growth from solutions; B1. GaN
Improvement of crystal quality and optical property in (11−22) semipolar InGaN/GaN LEDs grown on patterned m-plane sapphire substrate
Keywords: B1 GaN; A3. Metalorganic chemical vapor deposition; B1. GaN; B1. Patterned sapphire substrate; B3. Light emitting diode
Growth and strain characterization of high quality GaN crystal by HVPE
Keywords: B1 GaN; A1. Stresses; A3. Hydride vapor phase epitaxy; B1. GaN;
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
Keywords: B1 GaN; A3. Chemical vapor deposition processes; B1. Nitrides; B1. GaN;
Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates
Keywords: B1 GaN; A1. Grain boundary; A1. Substrate; A1. Terrace/step; A1. Threading dislocations; A3. Homoepitaxy; B1. GaN
Dislocation bending and tensile stress generation in GaN and AlGaN films
Keywords: B1 GaN; A1. Dislocation bending; A1. Kinetics; A1. Stresses; B1. AlGaN; B1. GaN
Growth of non-polar GaN on LiGaO2 by plasma-assisted MBE
Keywords: B1 GaN; B1. Non-polar nitrides; B1. LiGaO2; B1. GaN; A3. Molecular beam epitaxy;
Strain relaxation in GaN/Al0.1Ga0.9N superlattices for mid-infrared intersubband absorption
Keywords: B1 GaN; A1. Superlattice; A1. Strain; A3. MBE; B1. GaN; B3. Intersubband;
Numerical simulation of ammonothermal growth processes of GaN crystals
Keywords: B1 GaN; A1. Convection; A1. Fluid flow; A1. Growth models; A2. Ammonothermal growth; B1. GaN;
Effects of growth pressure on the properties of p-GaN layers
Keywords: B1 GaN; A1. p-GaN; A1. Mg doping; A1. Mg incorporation efficiency; A2. Growth pressure; B1. MOCVD; B1. GaN
Spontaneous formation of GaN nanostructures by molecular beam epitaxy
Keywords: B1 GaN; A1. Nanorods; A1. Nanostructures; A3. Molecular beam epitaxy; B1. GaN; B2. Semiconducting III-V materials; B3. Light emitting diodes
Growth of p-CdTe thin films on n-GaN/sapphire
Keywords: B1 GaN; B1. CdTe; B1. GaN
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
Keywords: B1 GaN; A1. CL; A1. PL; A1. Stacking fault; A3. HVPE; B1. GaN; B1. Nonpolar
Interface of GaN grown on Ge(1 1 1) by plasma assisted molecular beam epitaxy
Keywords: B1 GaN; A1. Diffusion; A1. Interfaces; A3. Molecular beam epitaxy; B1. GaN; B1. Germanium; B1. Ge3N4
Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth
Keywords: B1 GaN; A1. Extended defect; A1. Inversion domain; A1. Stacking fault; A3. Hydride vapor phase epitaxy; B1. Gallium nitride; B1. GaN
Influence of LT-GaN nucleation layer on the structural and optical properties of MOVPE-grown a-plane GaN
Keywords: B1 GaN; A1. Nucleation layer; A3. MOVPE; A3. V/III ratio; B1. GaN; B2. Nonpolar
The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on (0Â 0Â 1) LaAlO3
Keywords: B1 GaN; A1. Domain; A1. Non-polar; A1. Transmission electron microscopy; A1. Twin; B1. GaN;
Orientation control of GaN {112¯2} and {101¯3¯} grown on (101¯0) sapphire by metal-organic vapor phase epitaxy
Keywords: B1 GaN; A1. MOVPE; A2. Single crystal structure; B1. GaN; B1. Nitrides; B1. Sapphire
Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate
Keywords: B1 GaN; 85.60.Jb; 81.15.Gh; 81.65.Cf; 78. 6.Fi.A3. MOCVD; B1. GaN; B1. Patterned sapphire substrate; B3. Light-emitting diodes