کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1791070 | 1524459 | 2013 | 5 صفحه PDF | دانلود رایگان |
GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2 in. diameter wafers using a low temperature/pressure MOVPE process with N2 as a carrier and dimethylhydrazine as an N source. 5 mm×5 mm sections of similar GaN layers were direct-fusion-bonded onto soda lime glass substrates after chemical lift-off from the sapphire substrates. X-Ray Diffraction, Scanning Electron Microscopy and Transmission Electron Microscopy confirmed the bonding of crack-free wurtzite GaN films onto a glass substrate with a very good quality of interface, i.e. continuous/uniform adherence and absence of voids or particle inclusions. Using this approach, (In) GaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming the expensive sapphire substrate so it can be utilized again for growth.
► GaN was grown by MOVPE on ZnO-buffered sapphire template.
► We have transferred the crystalline GaN film onto Glass substrate.
► The direct water bonding was conducted at room temperature.
► The adhesion forces were found to be very strong and durable.
► Wafer scale GaN on ZnO growth was demonstrated with very high uniformity.
Journal: Journal of Crystal Growth - Volume 370, 1 May 2013, Pages 63–67