Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth

In this study, we simulated the solution growth of gallium nitride (GaN) and investigated the diffusion behavior of nitrogen (N) atoms on growth surfaces by molecular dynamics simulation. The simulation showed that the Ga-face grew flatter than the N-face. Comparing the diffusion coefficients of a N atom on Ga- and N-faces, the values on the Ga-face were about 3.5 times larger than those on the N-face.

► We simulated the solution growth of gallium nitride by molecular dynamics simulation.
► We investigated the diffusion behavior of nitrogen atoms on growth surfaces.
► The simulation showed that the Ga-face grew flatter than the N-face.
► Diffusion coefficient of N atoms on the Ga-face was larger than those on the N-face.