کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8152226 | 1524449 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An influence of a nitridation process on a self lift-off phenomenon during the HVPE crystallization of GaN on a MOCVD-GaN/sapphire template with photolitographically patterned Ti mask was investigated. Duration of the nitridation process and flows of reagents in this process were modified. A correlation between degradation degree of a GaN template surface and the conditions of the nitridation process was observed. It was also observed that the degree of degradation had a direct influence on a moment of the self lift-off phenomenon (separation of a HVPE-GaN crystal from the template). It was shown that the best free-standing HVPE-GaN crystals, in sense of their structural quality, were obtained when the separation process occurred during cooling down step.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 380, 1 October 2013, Pages 99-105
Journal: Journal of Crystal Growth - Volume 380, 1 October 2013, Pages 99-105
نویسندگان
M. Amilusik, T. Sochacki, B. Åucznik, M. BoÄkowski, B. Sadovyi, A. Presz, I. DziÄcielewski, I. Grzegory,