Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method

► GaN epilayers were grown on Si(111) at 980 °C by hydride vapor phase epitaxy (HVPE). ► High GaCl flow rate can increase the growth rate and improve the surface morphology. ► High NH3 flow rate is not good for reducing dislocations. ► 1.22 μm-GaN layer without crack was obtained with a three-step growth method. ► The FWHM of GaN(0002) is 599 arcsec.