کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1792298 | 1023640 | 2011 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Growth of p-CdTe thin films on n-GaN/sapphire Growth of p-CdTe thin films on n-GaN/sapphire](/preview/png/1792298.png)
CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 μm/min. In addition, we confirmed that CdCl2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.
Journal: Journal of Crystal Growth - Volume 326, Issue 1, 1 July 2011, Pages 69–72