کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489171 | 1524352 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, the authors reported recent work on the growth and fabrication of InGaAs/GaAsSb type II superlattice detectors by solid source molecular beam epitaxy. Superlattice materials with different Beryllium (Be) doping concentration were grown and characterized by high resolution X-ray diffraction, Hall Effect technique, and photoluminescence. The results showed that doping concentration of the superlattice was sensitive to the Be temperature. A p-Ï-n InGaAs/GaAsSb T2SL photodiode was grown on an InP substrate. The full width at half maximum of the first order satellite peak from X-ray diffraction was 36 arcsec. The photodiode with 7 nm InGaAs and 5 nm GaAsSb in each period showed a 50% cutoff wavelength of 2.35 μm at 293 K. The dark current density at â50 mV bias was 0.54 mA/cm2 and the resistance-area product at zero bias (R0A) was 46 Ω â
 cm2. The peak detectivity was 4.4 Ã 1010 cm Hz1/2/W. The quantum efficiency at 2.1 μm was measured to be 48.2%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 100-103
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 100-103
نویسندگان
Chuan Jin, Fangfang Wang, Qingqing Xu, Chengzhang Yu, Jianxin Chen, Li He,