GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3 μm light emission grown on InP substrate

In this paper we present the epitaxial growth and characterization of an InP-based micro-cavity light emitting diode (LED) with up to 3 μm light emission by using GaInAs/GaAsSb-based type-II quantum wells. The LED was grown by LP-MOVPE and achieves emission from 2 μm to 3 μm at room-temperature. Furthermore a second LED with centered emission at 2.8 μm has been realized. Hence, the achievable long-wavelength electroluminescence emission with InP-based materials has been extended up to 3 μm.

► InP-based LED grown by LP-MOVPE emits from 2 μm to 3 μm at room-temperature and continuous wave operation.
► Long wavelength emission is achieved by using GaAsSb/GaInAs type-II quantum wells grown at 500 °C.
► Emission is stable up to 80 °C and output power is in the order of tens of μW.