MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures

• MOVPE of InAs/AlAsSb/GaSb and InAs/AlAsSb/InAs heterostructures of excellent quality.
• AlAsSb epilayers characterized by XRD rocking curves with FWHM routinely below 100″.
• Details of nucleation are reviewed and choice of suitable precursors are discussed.

We demonstrate MOVPE-growth of InAs/AlAs0.16Sb0.84/GaSb and InAs/AlAs0.16Sb0.84/InAs heterostructures of excellent quality as observed by transmission electron microscopy and x-ray diffraction 2-theta-omega and rocking curve scans with full width at half maximum routinely below 100″. Key points regarding interface control for heteroepitaxial nucleation are reviewed and the choice of suitable precursors to minimize the incorporation of C and O are discussed.