کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
12018894 | 1023978 | 2019 | 37 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1â¯1â¯1) substrate by MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, growth of Au-free InAs/InSb vertical heterostructure (HS) nanowires (NWs) on highly lattice mismatched Si (1â¯1â¯1) substrate by metal organic chemical vapor deposition (MOCVD) is demonstrated. Careful selections of InSb growth parameters lead to In-rich growth regime such that direct impingement of growth precursors on top of grown InAs NW (self-assembled) stems result in axial InSb HSs nucleation on InAs stems. The observed indium (In) droplet on InSb HS NW tip shows that InSb HS growth followed a self-catalyzed growth mechanism. InSb HS axial growth rate and morphology are controlled by growth temperature and growth time. A small change in the growth parameters significantly affects In particle accumulation, particle size and its chemical composition, and thus affects the InSb nucleation on the stem. Especially, it is found that (i) growth time of less 10â¯min yields vertical InSb HS NW on the top of the InAs stem, (ii) as the growth time increases above 10â¯min, the growth turned to be InSb wrapped InAs/InSb core-shell HS due to coaxial lateral growth. High resolution transmission electron microscopy (HRTEM) study reveals that all the InSb HSs exhibit pure zinc-blende (ZB) crystal structure. The results presented here provide significant guidelines for external catalyst-free InAs/InSb HS NW growth using MOCVD on silicon (Si) substrate for various optoelectronics and electronics applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 506, 15 January 2019, Pages 45-54
Journal: Journal of Crystal Growth - Volume 506, 15 January 2019, Pages 45-54
نویسندگان
Deepak Anandan, Ramesh Kumar Kakkerla, Hung Wei Yu, Hua Lun Ko, Venkatesan Nagarajan, Sankalp Kumar Singh, Ching Ting Lee, Edward Yi Chang,