کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149044 | 1524346 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
The growth of undoped GaSb epilayers on GaAs (0â¯0â¯1) substrates with 2° offcut towards ã1â¯1â¯0ã, by molecular beam epitaxy system (MBE) at low growth temperature is reported. The strain due to the lattice mismatch of 7.78% is relieved spontaneously at the interface by using interfacial misfit array (IMF) growth mode. Three approaches of this technique are investigated. The difference consists in the steps after the growth of GaAs buffer layer. These steps are the desorption of arsenic from the GaAs surface, and the cooling down to the growth temperature, under or without antimony flux. The X-ray analysis and the transmission electron microscopy point out that desorption of arsenic followed by the substrate temperature decreasing under no group V flux leads to the best structural and crystallographic properties in the GaSb layer. It is found that the 2â¯Âµm-thick GaSb is 99.8% relaxed, and that the strain is relieved by the formation of a periodic array of 90° pure-edge dislocations along the [1â¯1â¯0] direction with a periodicity of 5.6â¯nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 483, 1 February 2018, Pages 26-30
Journal: Journal of Crystal Growth - Volume 483, 1 February 2018, Pages 26-30
نویسندگان
D. Benyahia, Å. Kubiszyn, K. Michalczewski, A. KÄbÅowski, P. Martyniuk, J. Piotrowski, A. Rogalski,