Keywords: B2 مواد نیمه هادی III-V; A1. Crystal morphology; A1. Defects; A1. Substrates; A3. Chemical vapor deposition processes; B2. Semiconducting III-V materials;
مقالات ISI B2 مواد نیمه هادی III-V (ترجمه نشده)
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Keywords: B2 مواد نیمه هادی III-V; A1. Low dimensional structures; A3. Molecular beam epitaxy; B1. Gallium compounds; B2. Semiconducting III-V materials; B2. Quantum dots; B3. Heterojunction semiconductor devices; Molecular beam epitaxy; Heterostructure; Quantum dot; Spin; Nuclear spin; Qu
Keywords: B2 مواد نیمه هادی III-V; A1. Crystal morphology; A1. Nanostructures; A2. Growth from solutions; B1. Bismuth compounds; B2. Semiconducting III-V materials;
Keywords: B2 مواد نیمه هادی III-V; A1. Characterization; A3. Quantum wells; B1. Nanomaterials; B2. Semiconducting III-V materials; B3. Solar cells;
Keywords: B2 مواد نیمه هادی III-V; A3. Low press. Metalorganic vapour phase epitaxy; A3. Selective epitaxy; B1. Gallium compounds; B1. Nanomaterials; B2. Semiconducting III-V materials;
Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted-molecular beam epitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. Reflection high energy electron diffraction; A1. Atomic force microscopy; A1. High resolution X-ray diffraction; A3. Plasma-assisted molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition
Keywords: B2 مواد نیمه هادی III-V; B1. Nitrides; B2. Semiconducting ternary compounds; B2. Semiconducting III-V materials; A1. Crystal morphology; A3. Metalorganic vapor phase epitaxy;
Surface passivation of InP using an organic thin film
Keywords: B2 مواد نیمه هادی III-V; A1. Surfaces; B1. Organic compounds; B2. Semiconducting III-V materials;
Growth of pure wurtzite InAs nanowires over a wide diameter range
Keywords: B2 مواد نیمه هادی III-V; A1. Nanostructures; A3. Metalorganic chemical vapor deposition; B1. Nanomaterials; B2. Semiconducting III-V materials;
Catalyst-free growth of lateral InAs nanowires
Keywords: B2 مواد نیمه هادی III-V; A1. Nanowires; A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Semiconducting III-V materials;
Spontaneous nanostructure formation in GaAsBi alloys
Keywords: B2 مواد نیمه هادی III-V; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting ternary compounds; B1. Bismuth compounds; B1. Alloys;
Influence of surface step width of 4H-SiC substrates on the GaN crystal quality
Keywords: B2 مواد نیمه هادی III-V; A1. Atomic force microscopy; A1. Nucleation; A1. Surface structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Growth of N-polar GaN by ammonia molecular beam epitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. Atomic force microscopy; A1. Morphological stability; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma assisted molecular beam epitaxy
Keywords: B2 مواد نیمه هادی III-V; A3. Molecular beam epitaxy; B1. Nitrides; A1. Segregation; B2. Semiconducting III-V materials; A1. Characterization;
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
Keywords: B2 مواد نیمه هادی III-V; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B1. Gallium arsenide substrate; B2. Semiconducting III-V materials;
Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
Keywords: B2 مواد نیمه هادی III-V; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; A1. Pulsed mode; B2. Semiconducting III-V materials;
Investigation of defect creation in GaP/Si(0â¯0â¯1) epitaxial structures
Keywords: B2 مواد نیمه هادی III-V; A1. Crystal structure; A1. Defects; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices
Keywords: B2 مواد نیمه هادی III-V; B2. Semiconducting III-V materials; B3. Vertical power devices; A1. Doping; A1. Ion implantation;
Orientation-dependent dissolution and growth kinetics of InxGa1âxSb by vertical gradient freezing method under microgravity
Keywords: B2 مواد نیمه هادی III-V; A1. Directional solidification; A2. Growth from melt; A2. Microgravity conditions; B2. Semiconducting III-V materials;
Interactions between Sb and As on InAs(0â¯0â¯1) surfaces
Keywords: B2 مواد نیمه هادی III-V; A1. Surface structure; A1. Phase diagrams; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials;
Fabrication of InAs quantum ring nanostructures on GaSb by droplet epitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. Low dimensional structure; A1. InAs nanostructures; A1. In-migration; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials;
Mesa orientation dependence of lateral growth of GaN microchannel epitaxy by electric liquid-phase epitaxy using a mesa-shaped substrate
Keywords: B2 مواد نیمه هادی III-V; A3. Liquid phase epitaxy; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; A1. Crystal morphology;
Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE
Keywords: B2 مواد نیمه هادی III-V; A3. Molecular beam epitaxy; A1. Impurities; B1. Bismuth compounds; B2. Semiconducting III-V materials;
Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage
Keywords: B2 مواد نیمه هادی III-V; A1. Nucleation; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer
Keywords: B2 مواد نیمه هادی III-V; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials; B3. Infrared devices;
Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template
Keywords: B2 مواد نیمه هادی III-V; A3. Metalorganic vapor phase epitaxy; A3. Thin films; B2. Semiconducting III-V materials; B2. Gallium arsenide; B2. Silicon;
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an nâ¯+â¯InAs(Si)/pâ¯+â¯GaSb(Si) Esaki diode
Keywords: B2 مواد نیمه هادی III-V; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials; B3. Esaki tunnel diodes; B3. Tunnel field effect transistors;
Macro-defect-free homoepitaxial GaN growth through halogen-free vapor-phase epitaxy on native GaN seeds
Keywords: B2 مواد نیمه هادی III-V; A1. Defects; A1. Stresses; A2. Single crystal growth; A3. Vapor phase epitaxy; B1. Nitride; B2. Semiconducting III-V materials;
GaAs quantum dot molecules filled into droplet etched nanoholes
Keywords: B2 مواد نیمه هادی III-V; A1. Nanostructures; A1. Surface processes; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources
Keywords: B2 مواد نیمه هادی III-V; B3. Two-color surface-emitting laser; A3. Coupled cavity; B2. Semiconducting III-V materials; B3. Coherent terahertz source;
Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (0Â 0Â 1) substrates
Keywords: B2 مواد نیمه هادی III-V; A1. High resolution X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Dilute nitrides; B2. Semiconducting III-V materials;
Effect of substrate temperature on self-assisted GaAs nanowires grown by Molecular Beam Epitaxy on GaAs (111)B substrates without SiO2 layer
Keywords: B2 مواد نیمه هادی III-V; A1. Nanostructures; A3. Molecular Beam Epitaxy; B1. GaAs; B1. Nanomaterials; B2. Semiconducting III-V materials;
InGaAsBi materials grown by gas source molecular beam epitaxy
Keywords: B2 مواد نیمه هادی III-V; B2. InGaAsBi; B1. Bismuth compounds; A3. Gas source molecular beam epitaxy (GSMBE); B2. Semiconducting III-V materials; B1. InP;
Growth of wurtzite InP/GaP core-shell nanowires by metal-organic molecular beam epitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. Crystal structure; A1. Nanostructures; A3. Metalorganic molecular beam epitaxy; A3. Phosphides; B2. Semiconducting gallium compounds; B2. Semiconducting III-V materials; B2. Semiconducting indium phosphide;
A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting gallium arsenide;
Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B3. Solar cells;
Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nanomaterials; B2. Semiconducting germanium; B2. Semiconducting III-V materials;
Growth rate dependence of boron incorporation into BxGa1âxAs layers
Keywords: B2 مواد نیمه هادی III-V; A3. Molecular beam epitaxy; B1. Arsenides; B2. Semiconducting III-V materials; A1. High resolution X-ray diffraction; A1. Doping;
Suppression of twin generation in the growth of GaAs on Ge (111) substrates
Keywords: B2 مواد نیمه هادی III-V; A1.Volume defects; A1. X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting III-V materials; B3. Solar cells;
Ga originated kink-and-tail Zn diffusion profiles in InGaAsP and InGaAlAs alloys during MOVPE regrowth
Keywords: B2 مواد نیمه هادی III-V; A1. Diffusion; A3. Metalorganic vapor phase epitxy; B2. Semiconducting III-V materials; B3. Laser diodes;
Growth of InN/GaN dots on 4H-SiC(0001) 4° off vicinal substrates by molecular beam epitaxy
Keywords: B2 مواد نیمه هادی III-V; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Atomistic behaviour of (nÃ3)-reconstructed areas of InAs-GaAs(001) surface at the growth condition
Keywords: B2 مواد نیمه هادی III-V; A1. Surface structure; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting indium compounds;
Thick nonpolar m-plane and semipolar (101Ì
1Ì
) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl3
Keywords: B2 مواد نیمه هادی III-V; A1. Substrates; A3. Hydride vapor-phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN
Keywords: B2 مواد نیمه هادی III-V; A1. Atomic force microscopy; A1. Characterization; A1. X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient
Keywords: B2 مواد نیمه هادی III-V; A1. High resolution X-ray diffraction; A1. Interfaces; A1. Growth models; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting gallium compounds; B2. Semiconducting III-V materials;
Emission wavelength control of ordered arrays of InGaAs/GaAs quantum dots
Keywords: B2 مواد نیمه هادی III-V; A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Non planar growth; A3. Quantum dots; B2. Semiconducting III-V materials; B2. Indium Gallium Arsenide;
Structural changes in nanocrystalline Bi2Te3/Bi2Se3 multilayer thin films caused by thermal annealing
Keywords: B2 مواد نیمه هادی III-V; A1. Crystal structure; A1. Nanostructures; A3. Physical vapor deposition processes; B1. Bismuth compounds; B2. Semiconducting III-V materials;
Studies on high temperature vapor phase epitaxy of GaN
Keywords: B2 مواد نیمه هادی III-V; A1. Impurities; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells
Keywords: B2 مواد نیمه هادی III-V; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B2. Semiconducting III-V materials; B2. Semiconducting gallium arsenide; B2. Semiconducting indium gallium phosphide; B3. Solar cells;
GaN and AlGaN/GaN heterostructures grown on two dimensional BN templates
Keywords: B2 مواد نیمه هادی III-V; B1. Nitrides; A3.Metalorganic vapor phase epitaxy; A1. Crystal morphology; B2. Semiconducting III-V materials;