کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5489490 1524362 2017 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (0 0 1) substrates
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (0 0 1) substrates
چکیده انگلیسی
GaNAs/GaP/BGaAsP-multiple quantum well heterostructures (MQWH) were deposited pseudomorphically strained on exactly oriented (0 0 1) Si-substrate plus thin GaP buffer by metal organic vapor phase epitaxy (MOVPE). The compressive strain of the GaNAs QW material enabled N fractions as high as 16.8%. Structural analyses show that the structures exhibit high crystalline quality for moderate strain values of 0.6% to 2.2%. Room temperature PL was obtained from samples with up to 11% N with an emission wavelength of up to 1130 nm. At low temperatures (15 K) even layers with 15% N showed photoluminescence from the GaNAs QW expanding the emission wavelength range to 1300 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 467, 1 June 2017, Pages 61-64
نویسندگان
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