کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11026326 | 1666394 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of defect creation in GaP/Si(0â¯0â¯1) epitaxial structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of defect creation in GaP/Si(0â¯0â¯1) epitaxial structures Investigation of defect creation in GaP/Si(0â¯0â¯1) epitaxial structures](/preview/png/11026326.png)
چکیده انگلیسی
This work investigates defect formation and evolution associated with the deposition of GaP layers on precisely oriented Si(0â¯0â¯1) substrates. The GaP layers were grown with thicknesses ranging from â¼37â¯nm to â¼2 µm at a growth rate of 0.52â¯Î¼m/hr using molecular beam epitaxy (MBE). The crystallinity of thin (37-nm) MBE-grown GaP layers was also compared with thin GaP layers grown by migration-enhanced epitaxy (MEE). The MBE growth procedure was shown to postpone relaxation of the epitaxial GaP layers up to a thickness of â¼250â¯nm. Detailed analysis of high-resolution X-ray diffraction patterns and comparison with cross-sectional transmission electron micrographs clarified the defect formation mechanism. Thin GaP layers showed very low defect densities except for anti-phase boundaries, whereas substantial threading defects predominated in the thicker, noticeably relaxed structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 503, 1 December 2018, Pages 36-44
Journal: Journal of Crystal Growth - Volume 503, 1 December 2018, Pages 36-44
نویسندگان
Chaomin Zhang, Allison Boley, Nikolai Faleev, David J. Smith, Christiana B. Honsberg,