کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148365 | 1524331 | 2018 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, we evaluate the effect of the novel symmetric multicycle rapid thermal annealing (SMRTA) process on both Mg ion implanted and non-implanted thick unintentionally doped GaN drift layers for vertical power devices. The typical p-type behavior and restoration of implant damage are observed in implanted samples, but on non-implanted samples a reduction in background carrier concentration and associated reduction in leakage current and increase in breakdown voltage is observed. This indicates that the capping/annealing process itself is not detrimental to the crystal, and the annihilation of native point defects in the process has beneficial effects for device structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 499, 1 October 2018, Pages 35-39
Journal: Journal of Crystal Growth - Volume 499, 1 October 2018, Pages 35-39
نویسندگان
T.J. Anderson, J.C. Gallagher, L.E. Luna, A.D. Koehler, A.G. Jacobs, J. Xie, E. Beam, K.D. Hobart, B.N. Feigelson,