کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489166 | 1524352 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth rate dependence of boron incorporation into BxGa1âxAs layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth rate dependence of boron incorporation into BxGa1âxAs layers Growth rate dependence of boron incorporation into BxGa1âxAs layers](/preview/png/5489166.png)
چکیده انگلیسی
This work provides a comprehensive study of the incorporation behavior of B in growing GaAs under molecular beam epitaxy conditions. Structural characterization of superlattices revealed a strong dependence of the BAs growth rate on the GaAs growth rate used. In general, higher GaAs growth rates lead to a higher apparent BAs growth rate, although lower B cell temperatures showed saturation behavior. Each B cell temperature requires a minimum GaAs growth rate for producing smooth films. The B incorporation into single thick layers was found to be reduced to 75-80% compared to superlattice structures. The p-type carrier densities in 1000Â nm thick layers were found to be indirectly proportional to the B content. Furthermore, 500Â nm thick BxGa1âxAs layers showed significantly lower carrier concentrations, indicating B segregation on the surface during growth of thicker layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 77-81
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 77-81
نویسندگان
H. Detz, D. MacFarland, T. Zederbauer, S. Lancaster, A.M. Andrews, W. Schrenk, G. Strasser,