کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148916 | 1524346 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Cubic boron phosphide epitaxy on zirconium diboride
ترجمه فارسی عنوان
اپی تیکس فسفید بور بر روی دی بورید زیرکونیوم
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
Cubic boron phosphide (BP) is one of the least studied III-V compound semiconductors, in part because it is difficult to prepare in high quality form. In this study, zirconium diboride (ZrB2) was studied as a potential substrate for BP epitaxial layers, because of its advantages of a low lattice constant mismatch and high thermal stability. Two types of substrates were considered: ZrB2(0â¯0â¯0â¯1) epitaxial films on 4H-SiC(0â¯0â¯0â¯1) and bulk ZrB2(0â¯0â¯0â¯1) single crystals. The optimal temperature for epitaxy on these substrates was 1100â¯Â°C; higher and lower temperatures resulted in polycrystalline films. The BP film/ZrB2 interface was abrupt as confirmed by cross-sectional transmission electron microscopy, attesting to the stability of ZrB2 under BP deposition conditions. The BP films were under compressive and tensile strain on ZrB2 and ZrB2/4H-SiC substrates, respectively, as determined by Raman spectroscopy, due to differences in the substrate/film coefficients of thermal expansion. This study suggests that with further optimization, ZrB2 can be an excellent substrate for BP epitaxial films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 483, 1 February 2018, Pages 115-120
Journal: Journal of Crystal Growth - Volume 483, 1 February 2018, Pages 115-120
نویسندگان
Balabalaji Padavala, H. Al Atabi, L. Tengdelius, J. Lu, H. Högberg, J.H. Edgar,