کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489172 | 1524352 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomistic behaviour of (nÃ3)-reconstructed areas of InAs-GaAs(001) surface at the growth condition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the spatial evolution of (nÃ3) surface reconstructed areas during the molecular beam epitaxial growth of InAs-GaAs(001) by using ab initio-based calculation and in situ observation, in order to understand the mechanism of consequent QD nucleation. Statistical analysis of (nÃ3)-reconstructed morphology reveals that the fraction of (8Ã3)-reconstructed areas, as well as those of (4Ã3) and (6Ã3), appears and decreases in the later stage of the growth. This behaviour is consistent with the result of our ab initio-based calculation incorporating chemical potentials of source materials in the gas phase. In contrast, fragmented (2Ã3) areas remain throughout the InAs growth as potential QD nucleation sites.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 104-109
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 104-109
نویسندگان
Tomoya Konishi, Shiro Tsukamoto, Tomonoroi Ito, Toru Akiyama, Ryo Kaida,