کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148441 | 1524336 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spontaneous nanostructure formation in GaAsBi alloys
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Spontaneous nanostructure formation in GaAsBi alloys Spontaneous nanostructure formation in GaAsBi alloys](/preview/png/8148441.png)
چکیده انگلیسی
Bismuth containing semiconductor alloys are of increasing interest for their potential applications as infrared devices, though material quality in these materials has often proven problematic. This work shows a series of GaAsBi films grown by molecular beam epitaxy over a range of temperatures, 340â¯Â°C-315â¯Â°C, with all other parameters equal. Atomic force microscopy shows that there is an increase in the surface roughness of the films from 0.8â¯nm to 2.7â¯nm RMS. Transmission electron microscopy and atom probe tomography reveals the onset of spontaneous nanostructure formation in the films including nanopores, lateral composition modulation, and Bi rich GaAsBi clusters. The phenomena are shown to correlate and linked to reaching a growth instability due to the differences in surface diffusivity of Bi and As adatoms.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 493, 1 July 2018, Pages 20-24
Journal: Journal of Crystal Growth - Volume 493, 1 July 2018, Pages 20-24
نویسندگان
C. Ryan Tait, Lifan Yan, Joanna M. Millunchick,