Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. High resolution X-ray diffraction; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting ternary compounds; B3. Solar cells;
مقالات ISI B2 ترکیبیات ترمیمی نیمه هادی (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Characterization; A1. Defects; A1. Solidification; A2. Bridgman technique; B1. Lithium compounds; B2. Semiconducting ternary compounds;
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Characterization; A1. Solidification; A2. Bridgman technique; B1. Lithium compounds; B2. Semiconducting ternary compounds
Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; B1. Nitrides; B2. Semiconducting ternary compounds; B2. Semiconducting III-V materials; A1. Crystal morphology; A3. Metalorganic vapor phase epitaxy;
Ultraviolet emission from MgZnO films and ZnO/MgZnO single quantum wells grown by pulsed laser deposition
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Characterization; A3. Laser epitaxy; A3. Quantum wells; B1. Alloys; B1. Oxides; B2. Semiconducting ternary compounds;
Spontaneous nanostructure formation in GaAsBi alloys
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting ternary compounds; B1. Bismuth compounds; B1. Alloys;
Lattice dynamics of the chalcopyrite and defect stannite phases in the Cu-(In, Ga)-Se system
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; 63.20.Dj; 78.30.âj; A1. Computer simulation; A1. Crystal structure; A1. Defects; A1. Dispersion curve calculation; A1. DV-Xα calculation; A1. Raman spectra; B1. Alloys; B2. Semiconducting ternary compounds;
Investigation on synthesis, growth, structure and physical properties of AgGa0.5In0.5S2 single crystals for Mid-IR application
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Crystal structure, X-ray diffraction; A2. Bridgman technique, growth from mel, single crystal growth; B1. Gallium compounds; B2. Semiconducting ternary compounds;
Control of conduction type in ferromagnetic (Zn,Sn,Mn)As2 thin films by changing Mn content and effect of annealing on thin films with n-type conduction
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A3. Molecular beam epitaxy; B1. Inorganic compounds; B2. Magnetic materials; B2. Semiconducting ternary compounds;
Flux growth of β-NaGaO2 single crystals
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A2. Growth from melt; A2. Single crystal growth; B1. Oxides; B2. Semiconducting ternary compounds;
Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1.Atomic force microscopy; A1.High resolution X-ray diffraction; A3. Metalorganic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting ternary compounds;
Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Line defects; A1. Substrates; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting ternary compounds;
Growth by MOCVD of In(Ga)AlN alloys, and a study of gallium contamination in these layers under nitrogen and hydrogen carrier gas
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A3. Metalorganic chemical vapor deposition; B2. Semiconducting ternary compounds; B2. Semiconducting indium compounds; B2. Semiconducting quarternary alloys; B1. Nitrides; A1. Atomic force microscopy;
Influence of growth conditions on the structural and opto-electronic quality of GaAsBi
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Bismuth compounds; B2. Semiconducting ternary compounds; B3. Heterojunction semiconductor devices; B3. Infrared devices;
LPE growth and optical characteristics of GaAs1âxSbx epilayer
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Crystal structure; A1. High resolution X-ray diffraction; A3. Liquid phase epitaxy; B2. Semiconducting ternary compounds;
Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A3. Metalorganic chemical vapor deposition; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting ternary compounds; A1. Defects;
Static sublimation purification process and characterization of LiZnAs semiconductor material
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Purification; B1. Lithium compounds; A1. Radiation; B2. Semiconducting ternary compounds; A1. X-ray diffraction
Growth characteristics of corundum-structured α-(AlxGa1−x)2O3/Ga2O3 heterostructures on sapphire substrates
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Crystal structure; A3. Chemical vapor deposition processes; B1. Oxides; B2. Semiconducting ternary compounds
Growth of BaIn2S4 layers through the hot-wall-epitaxy method and their electric/optical properties
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Characterization; A3. Hot wall epitaxy; B1. BaIn2S4; B2. Semiconducting ternary compounds;
Thin single-crystalline Bi2(Te1âxSex)3 ternary nanosheets synthesized by a solvothermal technique
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Crystal structure; A2. Hydrothermal crystal growth; B1. Nanomaterials; B2. Semiconducting ternary compounds;
Hot-wall-epitaxy growth and electrical/optical characterization of epitaxial BaAl2S4/GaAs layers
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Characterization; A3. Hot wall epitaxy; B1. BaAl2S4; B2. Semiconducting ternary compounds
Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting ternary compounds
Two-dimensional bismuth-rich nanosheets through the evaporative thinning of Se-doped Bi2Te3
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A3. Evaporative thinning; A1. Solid solutions; A3. Physical vapor deposition processes; B2. Topological insulators; B1. Nanomaterials; B2. Semiconducting ternary compounds
Photoelasticy method for study of structural imperfection of ZnGeP2 crystals
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Defects; A1. X-ray topography; A2. Single crystal growth; B2. Semiconducting ternary compounds; B3. Nonlinear optical; Photoelasticity method;
Evolution of epilayer tilt in thick InxGa1−xAs metamorphic buffer layers grown by hydride vapor phase epitaxy
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Crystal structure; A1. High resolution X-ray diffraction; A3. Hydride vapor phase epitaxy; B2. Semiconducting III–V materials; B2. Semiconducting ternary compounds
Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. X-ray diffraction; A1. Atomic force microscopy; A3. Low press. metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting ternary compounds;
Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Interfaces; A1. X-ray diffraction; A3. Superattices; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting ternary compounds;
Static sublimation purification process and characterization of LiZnP semiconductor material
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Purification; A1. Radiation; A1. X-ray diffraction; B1. Lithium compounds; B2. Semiconducting ternary compounds
Growth and structure determination of ZrSTe—A new ternary phase of transition metal chalcogenides
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Crystal structure; A1. X-ray diffraction; A1. Single crystal growth; A2. Growth from vapor; B1. Sulfide; B2. Semiconducting ternary compounds; Telluride
In-situ monitoring during MBE growth of InAs based heterostructures
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A3. Molecular beam epitaxy; B1. Arsenides; B1. Antimonide; B2. Semiconducting III-V materials; B2. Semiconducting ternary compounds;
Synthesis and characterization of LiZnP and LiZnAs semiconductor material
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1 Crystal structure; A1. Radiation; A1. X-ray diffraction; B1. Lithium compounds; B2. Semiconducting ternary compounds;
Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Crystal morphology; A1. Desorption; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting ternary compounds;
Bulk crystal growth, and high-resolution x-ray diffraction results of LiZnP semiconductor material
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Radiation; A1. x-ray diffraction; A1. Crystal Structure; A2. Bridgman technique; B1. Lithium compounds; B2. Semiconducting ternary compounds
Growth and Hall-effect/photocurrent analysis on BaAl2Se4 layers grown by hot wall epitaxy method
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Characterization; A3. Hot wall epitaxy; B1. BaAl2Se4; B2. Semiconducting ternary compounds
Probing diffusion of In and Ga in CuInSe2/CuGaSe2 bilayer thin films by x-ray diffraction
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Defects; A1. Diffusion; A1. X-ray Diffraction; A3. Physical vapor deposition process; B2. Semiconducting ternary compounds; B3. Solar cells;
Electrical effect of introducing elemental sodium into the Bridgman melt of CuInSe2+x crystals
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. X-ray diffraction; A2. Bridgman technique; A3. Single-crystal growth; B2. Semiconducting ternary compounds; B3. Solar Cells
The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Nanostructures; A3. Crystal morphology; A3. Metal organic chemical vapor deposition; B1. Antimonides; B2. Semiconducting ternary compounds
Growth of Ga(AsBi) on GaAs by continuous flow MOVPE
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A3. Metalorganic vapor phase epitaxy; B1. Bismuth compounds; B2. Semiconducting III–V materials; B2. Semiconducting gallium arsenide; B2. Semiconducting ternary compounds
The effect of structural vacancies on the twins in defect zinc-blende crystal Hg3In2Te6 grown by Bridgman method
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Planar defects; A1. Point defects; A2. Bridgman technique; B2. Semiconducting mercury compounds; B2. Semiconducting ternary compounds;
Growth and photocurrent characteristics of the photoconductive MnAl2S4 layers grown by hot-wall epitaxy method
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Characterization; A3. Hot-wall epitaxy; B2. Semiconducting ternary compounds; MnAl2S4;
Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Atomic force microscopy; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting ternary compounds;
Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1−yBiy
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. High resolution x-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Bismuth compounds; B2. Semiconducting III–V materials; B2. Semiconducting ternary compounds; B2. Semiconducting gallium arsenide
Compositional grading in GaAsSb grown on GaAs substrates
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Interfaces; A1 Surfaces; A1. X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting ternary compounds;
Low temperature growth of GaAs1âyBiy epitaxial layers
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. High resolution X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Bismuth compounds; B2. Semiconducting III-V materials; B2. Semiconducting ternary compounds; B2. Semiconducting Gallium Arsenide;
Growth and electrical/optical characteristics of unintentional p-type BaIn2Se4 epilayers grown using hot wall epitaxy method
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Characterization; A3. Hot wall epitaxy; B1. BaIn2Se4; B2. Semiconducting ternary compounds;
Optical and transport properties of GaGeTe single crystals
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A2. Bridgman technique; B1. Gallium compounds; B2. Semiconducting ternary compounds;
Growth of heterostructures on InAs for high mobility device applications
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Atomic force microscopy; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting ternary compounds; B2. Semiconducting indium compounds
Synthesis and physical properties of Li7V0.5Mn0.5N4
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Characterization; A1. X-ray diffraction; A2. Growth from melt; B1. Nitrides; B2. Semiconducting ternary compounds;
In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A3. Metalorganic vapor phase epitaxy; A3. Superlattices; B1. Nitrides; B2. Semiconducting ternary compounds;
Growth of CdSiP2 single crystals by double-walled quartz ampoule technique
Keywords: B2 ترکیبیات ترمیمی نیمه هادی; A1. Characterization; A2. Bridgman technique; A2. Single crystal growth; B1. CdSiP2; B2. Nonlinear optic materials; B2. Semiconducting ternary compounds