کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797550 | 1524560 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lattice dynamics of the chalcopyrite and defect stannite phases in the Cu-(In, Ga)-Se system
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Lattice dynamics of the chalcopyrite and defect stannite phases in the Cu-(In, Ga)-Se system Lattice dynamics of the chalcopyrite and defect stannite phases in the Cu-(In, Ga)-Se system](/preview/png/1797550.png)
چکیده انگلیسی
Raman spectra observed for bulk crystals of defect stannite phases in the Cu-(In, Ga)-Se system are analyzed mainly by the dispersion curve calculations with a superposed lattice model, assuming four fundamental structures. The calculations are performed on the basis of the Keating model, solving dynamical matrix of 24Ã24. Vacancy induced modifications on force interactions between nearest atoms are also discussed with effective bond overlap population and effective charges determined by the DV-Xα calculations for unit cell clusters. Apparently, invariable Raman profiles with respect to the In to Ga molar ratios through the alloy systems are explained by the superposed lattice model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 237â239, Part 3, April 2002, Pages 2014-2018
Journal: Journal of Crystal Growth - Volumes 237â239, Part 3, April 2002, Pages 2014-2018
نویسندگان
Shigetaka Nomura, Saburo Endo,