Growth and Hall-effect/photocurrent analysis on BaAl2Se4 layers grown by hot wall epitaxy method

• The epitaxial layer growth was first achieved by the hot wall epitaxy method.
• Characteristic property was found by DCXD, Hall effect, and PC measurements.
• The valence band splitting was directly extracted by means of PC spectroscopy.
• The band gap energy was obtained through the optical absorption and PC measurements.

The epitaxial growth of photoconductive BaAl2Se4 layers, which have a tetragonal structure, was first achieved through the hot wall epitaxy method. From the Hall effect result, in the high temperature range of T>230 K, the mobility decreased as a function of T−3/2 and its scattering was mainly due to the acoustic phonon mode of lattice vibrations through a deformation potential. Thus, at the intermediate temperature range (100