Keywords: A3 اپیتاکسی دیوار داغ; A1. Atomic force microscopy; A1. Characterization; A1. X-ray diffraction; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting silicon compounds;
مقالات ISI A3 اپیتاکسی دیوار داغ (ترجمه نشده)
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The role of hydrogen in carbon incorporation and surface roughness of MOCVD-grown thin boron nitride
Keywords: A3 اپیتاکسی دیوار داغ; A3. Metalorganic chemical vapor deposition; A3. Hot wall epitaxy; B1. Boron nitride epitaxy A1.SIMS characterization; A1. Surface morphology;
Hot-wall low pressure chemical vapor deposition growth and characterization of AlN thin films
Keywords: A3 اپیتاکسی دیوار داغ; A3. Hot wall epitaxy; A3. Low press. metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; B2. Piezoelectric materials; B2. Semiconducting aluminum compounds;
Growth of BaIn2S4 layers through the hot-wall-epitaxy method and their electric/optical properties
Keywords: A3 اپیتاکسی دیوار داغ; A1. Characterization; A3. Hot wall epitaxy; B1. BaIn2S4; B2. Semiconducting ternary compounds;
Hot-wall-epitaxy growth and electrical/optical characterization of epitaxial BaAl2S4/GaAs layers
Keywords: A3 اپیتاکسی دیوار داغ; A1. Characterization; A3. Hot wall epitaxy; B1. BaAl2S4; B2. Semiconducting ternary compounds
Growth and Hall-effect/photocurrent analysis on BaAl2Se4 layers grown by hot wall epitaxy method
Keywords: A3 اپیتاکسی دیوار داغ; A1. Characterization; A3. Hot wall epitaxy; B1. BaAl2Se4; B2. Semiconducting ternary compounds
In-situ decomposition and etching of AlN and GaN in the presence of HCl
Keywords: A3 اپیتاکسی دیوار داغ; A1. Etching; A3. Metalorganic vapor phase epitaxy; A3. Hot wall epitaxy; B1. Nitrides;
Growth and electrical/optical characteristics of unintentional p-type BaIn2Se4 epilayers grown using hot wall epitaxy method
Keywords: A3 اپیتاکسی دیوار داغ; A1. Characterization; A3. Hot wall epitaxy; B1. BaIn2Se4; B2. Semiconducting ternary compounds;
HCl-assisted growth of GaN and AlN
Keywords: A3 اپیتاکسی دیوار داغ; A3. Metalorganic vapor phase epitaxy; A3. Hot wall epitaxy; B1. Nitrides
Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition
Keywords: A3 اپیتاکسی دیوار داغ; A1. Polymorphism; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; A3. Ga2O3; B2. Semiconducting gallium compounds;
Structural, electric, and optical properties of MgGa2Se4 epilayers grown by hot wall epitaxy method
Keywords: A3 اپیتاکسی دیوار داغ; A1. Characterization; A3. Hot wall epitaxy; B1. MgGa2Se4; B2. Semiconducting ternary compounds
The deviation from a stoichiometry and the amphoteric behaviour of Ga in PbTe/Si films
Keywords: A3 اپیتاکسی دیوار داغ; A1. Crystal structure; A1. Doping; A1. Impurities; A1. Point defects; A3. Hot wall epitaxy; B2. Semiconducting lead compounds;
Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC
Keywords: A3 اپیتاکسی دیوار داغ; A1. Crystal morphology; A1. Doping; A3. Chemical vapor deposition; A3. Hot wall epitaxy; A3. Chloride vapor phase epitaxy; B2. Semiconducting silicon carbide
Low-temperature homoepitaxial growth of 4H–SiC with CH3Cl and SiCl4 precursors
Keywords: A3 اپیتاکسی دیوار داغ; A1. Crystal morphology; A1. Growth models; A3. Chemical vapor deposition; A3. Chloride vapor phase epitaxy; A3. Hot wall epitaxy; B2. Semiconducting silicon carbide
Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC
Keywords: A3 اپیتاکسی دیوار داغ; A1. Growth models; A1. Crystal morphology; A3. Chemical vapor deposition; A3. Hot wall epitaxy; A3. Chloride vapor phase epitaxy; B2. Semiconducting silicon carbide;
Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
Keywords: A3 اپیتاکسی دیوار داغ; 81.05.Hd; 81.10.Bk; 81.15.Gh; A1. Doping; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B1. Silicon carbide;
Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
Keywords: A3 اپیتاکسی دیوار داغ; 81.05.Hd; 81.10.Bk; 81.15.Gh; A1. Doping; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B1. Silicon carbide;
On-axis homoepitaxial growth on Si-face 4H–SiC substrates
Keywords: A3 اپیتاکسی دیوار داغ; 81.10.−h; 61.72.Nn; 61.72.Ff; 81.65.Cf; 81.15.Gh; 81.65.−b; 82.40.−g; 68.37.PsA1. Atomic force microscopy; A1. Etching; A3. Hot wall epitaxy; B2. Semiconducting materials; B3. Bipolar transistors
Structural and optical properties of CuGaSe2 layers grown by the hot wall epitaxy method
Keywords: A3 اپیتاکسی دیوار داغ; 68.60.−p; 78.20.−e; 78.55.−m; 81.15.−zA1. Characterization; A3. Hot wall epitaxy; B2. Semiconducting ternary compounds; B3. Solar cells
Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0 0 0 1) Si face epilayers
Keywords: A3 اپیتاکسی دیوار داغ; 81.15.Gh; 81.10.Aj; 81.10.Bk; 81.05.Hd; A1. Characterization; A1. Defects; A1. Etching; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting materials;
Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor
Keywords: A3 اپیتاکسی دیوار داغ; 81.05.Hd; 81.15.GhA1. Doping; A1. Stresses; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B1. Silicon carbide
Mechanism of n-doping of silicon carbide epitaxial films
Keywords: A3 اپیتاکسی دیوار داغ; A1. Doping; A3. Chemical vapour deposition processes; A3. Hot wall epitaxy; B2. Semiconducting materials
Investigations on the effect of InSb and InAsSb step-graded buffer layers in InAs0.5Sb0.5 epilayers grown on GaAs (0Â 0Â 1)
Keywords: A3 اپیتاکسی دیوار داغ; 81.15.Kk; 81.10.Bk; 81.05.Ea; 68.55.Jk; 61.10.Nz; A1. Surface morphology; A1. X-ray diffraction: A2. Growth from vapor; A3. Hot wall epitaxy; B2. Semiconducting III-V materials;
Epitaxial growth of 4H–SiC on 4° off-axis (0 0 0 1) and (0 0 0 1¯) substrates by hot-wall chemical vapor deposition
Keywords: A3 اپیتاکسی دیوار داغ; A1. Crystal morphology; A3. Hot wall epitaxy; A3. Vapor-phase epitaxy; B2. Semiconducting materials
Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors
Keywords: A3 اپیتاکسی دیوار داغ; A1. Morphology; A3. C60 thin film; A3. Hot wall epitaxy; B2. Organic field-effect transistors
Growth and characterization of CuAlSe2(1 1 2)/GaAs(1 0 0) heteroepitaxial layers grown by hot wall epitaxy method
Keywords: A3 اپیتاکسی دیوار داغ; 68.60.−p; 73.50.−h; 78.55.−m; 81.15.−zA1. Characterization; A3. Hot wall epitaxy; B2. Semiconducting ternary compounds
Influence of arsenic temperature on the structural and electrical characteristics of InAsSb layers grown on GaAs by hot wall epitaxy
Keywords: A3 اپیتاکسی دیوار داغ; 81.15.Kk; 81.10.Bk; 81.05.Ea; 68.55.Jk; 61.10.Nz; A1. Surface morphology; A1. X-ray diffraction; A2. Growth from vapor; A3. Hot wall epitaxy; B2. Semiconducting III-V materials;
Optical characterization of ZnO whiskers grown without catalyst by hot wall epitaxy method
Keywords: A3 اپیتاکسی دیوار داغ; 72.80.Ey; 78.55.Et; 78.66.Hf; A1. Characterization; A1. Crystal structure; A1. X-ray diffraction; A3. Hot wall epitaxy; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Improvement of the structural and electrical properties of InAsSb epilayer using Sb-rich InAsSb buffer layer grown by hot wall epitaxy
Keywords: A3 اپیتاکسی دیوار داغ; 81.15.Kk; 81.10.Bk; 81.05.Ea; 68.55.Jk; 61.10.Nz; A1. Surface morphology; A1. X-ray diffraction; A2. Growth from vapor; A3. Hot wall epitaxy; B2. Semiconducting III-V materials;
Gas recycling in a stacked susceptor epitaxial reactor
Keywords: A3 اپیتاکسی دیوار داغ; 81.15.Kk; 84.60.Jt; 05.70.Ln; A1. Gas recycling; A1. High-throughput reactor; A3. Hot wall epitaxy;
Para-sexiphenyl thin films on KCl(1Â 0Â 0) surfaces: Growth morphologies and their individual epitaxial order
Keywords: A3 اپیتاکسی دیوار داغ; 61.10.âi; 61.10.Yh; 61.66.Hq; 68.55.âa; 72.80.L; A1. Crystal morphology; A1. Crystal structure; A1. X-ray diffraction; A3. Hot wall epitaxy; B1. Aromatic compounds;