Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

Hot wall epitaxially grown C60 based organic field-effect transistors (OFETs) show relatively high electron mobilities of 0.4–1 cm2/Vs. We report results of thin film grown with various growth conditions such as preheating and initial substrate temperatures resulting in strikingly different fullerene film nanomorphology. The mobility is enhanced up to 3 cm2/Vs for films grown at a substrate temperatures of 130 °C. This improvement in the mobility is explained in terms of a transition from a disordered interface consisting of small-elongated grains to a well-ordered C60 film with bigger and rounder grains.