کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795021 | 1023712 | 2008 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0 0 0 1) Si face epilayers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0 0 0 1) Si face epilayers Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0 0 0 1) Si face epilayers](/preview/png/1795021.png)
چکیده انگلیسی
Growth of high-quality epilayers on low off-cut angle wafers is essential for the development of high-performance devices based on hexagonal SiC. Device killing defects such as triangular and inverted pyramid-type defects formed during homoepitaxial growth on the 4H-SiC Si face, 4° off-cut towards [1 1 2¯ 0] direction, have been investigated in this work. The goal of this research was to minimize or eliminate these defects. Growth parameters responsible for triangular defect formation were identified and optimized for its reduction. It was found that although growth at high temperatures reduces the density of triangular defects and inverted pyramid-type defects, it is not the only remedy for reducing their density; cleanliness of the susceptor along with the initial growth condition plays a major role in the formation of these defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 20, 1 October 2008, Pages 4443-4450
Journal: Journal of Crystal Growth - Volume 310, Issue 20, 1 October 2008, Pages 4443-4450
نویسندگان
A. Shrivastava, P. Muzykov, J.D. Caldwell, T.S. Sudarshan,