کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8151866 1524446 2013 17 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and electrical/optical characteristics of unintentional p-type BaIn2Se4 epilayers grown using hot wall epitaxy method
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth and electrical/optical characteristics of unintentional p-type BaIn2Se4 epilayers grown using hot wall epitaxy method
چکیده انگلیسی
The epitaxial growth of photoconductive BaIn2Se4, which has orthorhombic structures, was first achieved through the hot wall epitaxy method. The electrical and optical characteristics of these epilayers were discussed. From the Hall effect measurement, in a high-temperature range of T>150 K, the mobility decreased as a function of T−1 and its scattering was mainly due to the acoustic phonon mode of lattice vibrations through a deformation potential. In contrast, the mobility decreased in proportional to T0.6 in a low-temperature range of T<150 K and its decrease was caused by the impurity ion scattering. Also, from the relation between the reciprocal temperature and the carrier concentration, two dominant levels 136.9 and 27.9 meV were extracted out and they were estimated to be the activation energies of the shallow acceptor levels caused by the native defects of the upper edge of the valence band. In addition, from the optical absorption measurement, the bandgap variation of BaIn2Se4 epilayers extracted was well expressed by Eg(T)=2.626 eV-4.99×10−3T2/(T+559).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 383, 15 November 2013, Pages 140-144
نویسندگان
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