کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794381 | 1023696 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A systematic n-type doping study has been performed on 4H- and 6H-SiC epilayers grown at high growth rate using chloride-based CVD. The effect of temperature, pressure, growth rate, C/Si and Cl/Si ratios and dopant flow on the incorporation of the nitrogen and phosphorus donor atoms has been investigated. It is found that the effect of the C/Si ratio on the incorporation of nitrogen or phosphorus atoms is similar to what has been reported for the standard low growth rate process without addition of chlorine. The Cl/Si ratio seems to affect the nitrogen incorporation at growth rates higher than 65 μm/h. The doping concentration is stable against variations in growth rate, growth pressure and growth temperature for the nitrogen-doped layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 5, 15 February 2009, Pages 1321-1327
Journal: Journal of Crystal Growth - Volume 311, Issue 5, 15 February 2009, Pages 1321-1327
نویسندگان
H. Pedersen, F.C. Beyer, J. Hassan, A. Henry, E. Janzén,