Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition

► Epitaxial stabilization of the metastable γ-phase Ga2O3 films was achieved. ► We show that the growth kinetics of mist CVD growth was followed by that of conventional CVD process. ► The refractive index of γ-phase Ga2O3 was evaluated to be 2.0-2.1 in the visible region. ► The direct and indirect band-gaps of γ-phase Ga2O3 were found to be 5.0 and 4.4 eV, respectively.