کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148704 | 1524342 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Control of conduction type in ferromagnetic (Zn,Sn,Mn)As2 thin films by changing Mn content and effect of annealing on thin films with n-type conduction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Control of conduction type in ferromagnetic (Zn,Sn,Mn)As2 thin films by changing Mn content and effect of annealing on thin films with n-type conduction Control of conduction type in ferromagnetic (Zn,Sn,Mn)As2 thin films by changing Mn content and effect of annealing on thin films with n-type conduction](/preview/png/8148704.png)
چکیده انگلیسی
The conduction type in (Zn,Sn,Mn)As2 thin films grown by molecular beam epitaxy (MBE) on InP substrates was found to be controllable from p-type to n-type as a function of Mn content. n-type (Zn,Sn,Mn)As2 thin films were obtained by Mn doping of more than approximately 11â¯cat.%. It is likely that Mn interstitials (MnI) incorporated by excess Mn doping are located at tetrahedral hollow spaces surrounded by Zn and Sn cation atoms and four As atoms, which are expected to act as donors in (Zn,Sn,Mn)As2, resulting in n-type conduction. The effect of annealing on the structural, electrical and magnetic properties of n-type (Zn,Sn,Mn)As2 thin films was investigated as functions of annealing temperature and time. It was revealed that even if the annealing temperature is considerably higher than the growth temperature of 320â¯Â°C, the magnetic properties of the thin films remain stable. This suggests that a MnI complex surrounded by Zn and Sn atoms is thermally stable during high-temperature annealing. The n-type (Zn,Sn,Mn)As2 thin films may be suitable for application as n-type spin-polarized injectors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 487, 1 April 2018, Pages 34-39
Journal: Journal of Crystal Growth - Volume 487, 1 April 2018, Pages 34-39
نویسندگان
Yuto Minamizawa, Tomohiro Kitazawa, Shiro Hidaka, Hideyuki Toyota, Shin-ichi Nakamura, Naotaka Uchitomi,