کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8152195 | 1524449 | 2013 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical and transport properties of GaGeTe single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
GaGeTe single crystals were grown using a modified Bridgman method. The prepared samples were characterized by X-ray diffraction and investigated using measurements of the reflectance in the plasma-resonance-frequency region and measurements of the transmittance spectra in the MIR, NIR and VIS regions. An analysis of the plasma resonance indicates a near-degenerate state in the GaGeTe single crystal. The variation of the square of the absorption coefficient, α2, as a function of incident radiation energy showed two distinct minima of α located at â0.5 and â1.0 eV. The free carrier scattering mechanism was estimated from the slope of the long-wavelength edge. The transport measurement evidence of single-crystalline GaGeTe is a degenerate p-type semiconductor with a concentration of holes of pâ
5.1019Â cmâ3. The mobility of the holes is rather low.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 380, 1 October 2013, Pages 72-77
Journal: Journal of Crystal Growth - Volume 380, 1 October 2013, Pages 72-77
نویسندگان
Vladimir Kucek, Cestmir Drasar, Jiri Navratil, Ludvik Benes, Petr Lostak,