Keywords: B1 ترکیبات گالیم; A1. Low dimensional structures; A3. Molecular beam epitaxy; B1. Gallium compounds; B2. Semiconducting III-V materials; B2. Quantum dots; B3. Heterojunction semiconductor devices; Molecular beam epitaxy; Heterostructure; Quantum dot; Spin; Nuclear spin; Qu
مقالات ISI B1 ترکیبات گالیم (ترجمه نشده)
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Keywords: B1 ترکیبات گالیم; A1. Characterization; A3. Metalorganic chemical vapor deposition; A3. Polycrystalline deposition; B1. Gallium compounds; B1. Oxides;
Keywords: B1 ترکیبات گالیم; A1. Interfaces; A1. X-ray diffraction; A3. Liquid phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials;
Keywords: B1 ترکیبات گالیم; A3. Low press. Metalorganic vapour phase epitaxy; A3. Selective epitaxy; B1. Gallium compounds; B1. Nanomaterials; B2. Semiconducting III-V materials;
Critical V/III dependence of formation of high density GaSb/GaAs quantum dots grown by AP-MOVPE
Keywords: B1 ترکیبات گالیم; A3. Metalorganic vapour phase epitaxy; B1. Antimonides; B1. Gallium compounds; A1. Nanostructures; A1. Atomic force microscopy; A1. Surface processes;
Investigation on synthesis, growth, structure and physical properties of AgGa0.5In0.5S2 single crystals for Mid-IR application
Keywords: B1 ترکیبات گالیم; A1. Crystal structure, X-ray diffraction; A2. Bridgman technique, growth from mel, single crystal growth; B1. Gallium compounds; B2. Semiconducting ternary compounds;
Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates
Keywords: B1 ترکیبات گالیم; A1. Atomic force microscopy; A1. Characterization; A1. X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides;
Comparison of GaP nanowires grown from Au and Sn vapor-liquid-solid catalysts as photoelectrode materials
Keywords: B1 ترکیبات گالیم; B1. Gallium compounds; B2. Semiconducting III-V materials; A1. Crystal structure; A1. Defects;
Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
Keywords: B1 ترکیبات گالیم; A1. Thermodynamic analysis; A3. Halide vapor phase epitaxy; B1. Oxides; B1. Gallium compounds; B2. Semiconducting III-VI materials;
Transition metal doping of GaSe implemented with low temperature liquid phase growth
Keywords: B1 ترکیبات گالیم; A1. Point defects; A2. Growth from melt; A3. Liquid phase epitaxy; B1. Gallium compounds; B2. Semiconducting gallium compounds; B3. Nonlinear optical;
Effect of Mg co-doping on scintillation properties of Ce:Gd3(Ga, Al)5O12 single crystals with various Ga/Al ratios
Keywords: B1 ترکیبات گالیم; A2. Czochralski method; A2. Single crystal growth; B1. Gadolinium compounds; B1. Gallium compounds; B1. Oxides; B2. Scintillator materials;
Growth and characterization of Ce:Gd3(Al, Ga)5O12 single crystals with various ratio of Ga to Al
Keywords: B1 ترکیبات گالیم; A2. Czochralski method; B1. Gadolinium compounds; B1. Gallium compounds; B1. Oxides; B2. Scintillator materials; B3. Scintillators;
Growth and characterization of β-Ga2O3 crystals
Keywords: B1 ترکیبات گالیم; A2. Growth from vapour; A3. Physical vapour deposition processes; B1. Gallium compounds; B1. Oxides; B2. Semiconducting gallium compounds; B2. Wide bandgap semiconductors;
Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers
Keywords: B1 ترکیبات گالیم; A1. Solubility; A1. Solvents; A2. Growth from solutions; A2. Ammonothermal crystal growth; A2. Solvothermal crystal growth; B1. Gallium compounds;
Growth and piezoelectric properties of Ca3Nb(Al0.5Ga0.5)3Si2O14 crystals with langasite structure
Keywords: B1 ترکیبات گالیم; A1. Crystal structure; A1. X-ray diffraction; A2. Czochralski method; B1. Gallium compounds; B2. Piezoelectric materials;
Electrical property and structural analysis of amphoteric impurity Ge doped GaSe crystal grown by liquid phase growth
Keywords: B1 ترکیبات گالیم; A2. Growth from solutions; B1. Gallium compounds; B2. Nonlinear optic materials;
Crystal orientation of monoclinic β-Ga2O3 thin films formed on cubic MgO substrates with a γ-Ga2O3 interfacial layer
Keywords: B1 ترکیبات گالیم; A1. Crystal structure; A1. X-ray diffraction; B1. Gallium compounds; B1. Oxides; B2. Semiconducting gallium compounds;
Experimental study of growth mechanism of GaAs microchannel epitaxy - Study of pinning effect of Si-doping
Keywords: B1 ترکیبات گالیم; A1. Doping; A1. Impurities; A3. Liquid phase epitaxy; B1. Gallium compounds; B2. Semiconducting gallium arsenide;
The orientational relationship between monoclinic β-Ga2O3 and cubic NiO
Keywords: B1 ترکیبات گالیم; A1. Crystal structure; A1. X-ray diffraction; B1. Gallium compounds; B1. Oxides; B2. Semiconducting gallium compounds
Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission
Keywords: B1 ترکیبات گالیم; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials; B3. Laser diodes
Surfactant antimony enhanced indium incorporation on InGaN (0001¯) surface: A DFT study
Keywords: B1 ترکیبات گالیم; A1. Computer simulation; A1. Surfaces; B1. Nitrides; B1. Gallium compounds; B2. Semiconducting III-V materials;
Preparation of a smooth GaN-Gallium solid-liquid interface
Keywords: B1 ترکیبات گالیم; A1. X-ray diffraction; A1. Interfaces; A3. Liquid phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials;
Species transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity
Keywords: B1 ترکیبات گالیم; A1. Computer simulation, fluid flows, mass transfer, heat transfer; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds;
Novel approach for n-type doping of HVPE gallium nitride with germanium
Keywords: B1 ترکیبات گالیم; A3. Hydride vapor phase epitaxy; A1. Doping; A2. Single Crystal Growth; B1. Gallium Compounds; B1. Nitrides; B2. Semiconducting III-V materials;
Bi flux-dependent MBE growth of GaSbBi alloys
Keywords: B1 ترکیبات گالیم; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B1. Bismuth compounds; B1. Gallium compounds; B2. Semiconducting III-V materials;
High growth speed of gallium nitride using ENABLE-MBE
Keywords: B1 ترکیبات گالیم; A1. High resolution X-ray diffraction; A1. Cathodoluminescence; A3. Molecular beam epitaxy; B1. Gallium compounds; B1. Nitrides;
Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon
Keywords: B1 ترکیبات گالیم; A1. Stress; A1. Substrate; A3. Molecular beam epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials;
Synthesis and characterization of β-Ga2O3 nanowires on amorphous substrates using radio-frequency powder sputtering
Keywords: B1 ترکیبات گالیم; A1. Nanostructures; A1. Characterization; A1. Growth models; A3. Physical vapor deposition processes; B1. Gallium compounds;
Zn-doping of GaAs nanowires grown by Aerotaxy
Keywords: B1 ترکیبات گالیم; A1. Nanostructures; A3. Metalorganic vapour phase epitaxy; B1. Arsenates; B1. Gallium compounds; B1. Nanomaterials; B2. Semiconducting III-V materials;
Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1−xAs/GaAs1−yPy superlattice on vicinal substrates
Keywords: B1 ترکیبات گالیم; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Gallium compounds; B2. Semiconducting III–V materials; B3. Solar cells
GaN:Co epitaxial layers grown by MOVPE
Keywords: B1 ترکیبات گالیم; A1. Doping; A3. Metalorganic vapor phase epitaxy; B1. Cobalt; B1. Gallium compounds; B1. Nitrides; B2. Magnetic materials; Spintronics
Czochralski growth of Gd3(Al5âxGax)O12 (GAGG) single crystals and their scintillation properties
Keywords: B1 ترکیبات گالیم; A2. Czochralski method; B1. Gadolinium compounds; B1. Gallium compounds; B1. Oxides; B2. Scintillator materials; B3. Scintillators;
Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy
Keywords: B1 ترکیبات گالیم; A1. Thermodynamic analysis; A3. Halide vapor phase epitaxy; B1. Oxides; B1. Gallium compounds; B2. Semiconducting III–VI materials.
The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates
Keywords: B1 ترکیبات گالیم; A1. Organometallic vapor phase epitaxy; A1. Stresses; A1. Substrates; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials;
High quality crack-free GaN film grown on si (1 1 1) substrate without AlN interlayer
Keywords: B1 ترکیبات گالیم; A1. Stresses; A1. Substrates; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III–V materials
Fabrication of free-standing GaN by using thermal decomposition of GaN
Keywords: B1 ترکیبات گالیم; A1. Interfaces; A3. Hydride vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides; B1. Sapphire
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
Keywords: B1 ترکیبات گالیم; A1. Crystal morphology; A1. X-ray diffraction; A3. Radical enhanced metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Nitrides
Liquid phase growth of bulk GaSe crystal implemented with the temperature difference method under controlled vapor pressure
Keywords: B1 ترکیبات گالیم; A1. Crystal morphology; A2. Growth from solutions; B1. Gallium compounds; B2. Nonlinear optic materials;
Optical and transport properties of GaGeTe single crystals
Keywords: B1 ترکیبات گالیم; A2. Bridgman technique; B1. Gallium compounds; B2. Semiconducting ternary compounds;
Planar Hall effect in a single GaMnAs film grown on Si substrate
Keywords: B1 ترکیبات گالیم; A1. Characterization; A3. Molecular beam epitaxy; B1. Gallium compounds; B2. Semiconducting III-VI materials; B2. Magnetic materials;
Control of magnetic anisotropy in (Ga,Mn)As with etching depth of specimen boundaries
Keywords: B1 ترکیبات گالیم; A1. Stresses; B1. Gallium compounds; B2. Magnetic materials; B2. Semiconducting III-V materials;
The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H2 and N2 carrier gases
Keywords: B1 ترکیبات گالیم; A1. Growth mechanism; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B2. Semiconducting III–V materials
Time evolution of self-assembled GaAs quantum rings grown by droplet epitaxy
Keywords: B1 ترکیبات گالیم; A1. Atomic force microscopy; A1. Nanostructures; A1. Optical microscopy; A3. Molecular beam epitaxy; B1. Gallium compounds; B2. Semiconducting III–V materials
Growth of thick GaN layer on ZnAl2O4 spinel layer by HVPE
Keywords: B1 ترکیبات گالیم; A1. Spinel layer; A2. Crystal growth; A3. Hydride vapor phase epitaxy; B1. Gallium compounds; B1. Zinc compounds
Compositionally undulating step-graded InAsyP1−y buffer layer growth by metal-organic chemical vapor deposition
Keywords: B1 ترکیبات گالیم; A3. Organometallic vapor phase epitaxy; B1. Gallium compounds; B2. Semiconducting gallium compounds; B2. Semiconducting indium compounds; B3. Solar cells
The effect of a temperature-varying sandwich buffer layer structure on GaN epitaxial layer grown on Si substrate
Keywords: B1 ترکیبات گالیم; A1. Characteristics; A1. Stresses; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Silicon
Optimized interfacial management for InGaAs/GaAsP strain-compensated superlattice structure
Keywords: B1 ترکیبات گالیم; A1. Surface structure; A3. Metalorganic vapor phase epitaxy; A3. Superlattices; B1. Gallium compounds; B2. Semiconducting III–V materials
Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs
Keywords: B1 ترکیبات گالیم; A1. Surface structure; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Gallium compounds; B2. Semiconducting III–V materials
Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching
Keywords: B1 ترکیبات گالیم; A1. Atomic force microscopy; A3. Hydride vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides
Analysis of the practical stability of dewetted Bridgman growth of GaAs
Keywords: B1 ترکیبات گالیم; A2. Single crystal growth; A2. Dewetted Bridgman technique; B1. Gallium compounds