کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149023 | 1524347 | 2018 | 25 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of GaP nanowires grown from Au and Sn vapor-liquid-solid catalysts as photoelectrode materials
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Comparison of GaP nanowires grown from Au and Sn vapor-liquid-solid catalysts as photoelectrode materials Comparison of GaP nanowires grown from Au and Sn vapor-liquid-solid catalysts as photoelectrode materials](/preview/png/8149023.png)
چکیده انگلیسی
Gallium phosphide (GaP) nanowire film electrodes have been prepared via solid sublimation of GaP powder using both gold (Au) and tin (Sn) nanoparticles as the vapor-liquid-solid (VLS) catalysts on Si(1â¯1â¯1) and GaP(1â¯1â¯1)B substrates. The resultant GaP nanowires are compared and contrasted in terms of structures and photoactivity in photoelectrochemical half cells. Raman spectra implicated a difference in the surface condition of the two types of nanowires. Complete wet etching removal of metallic VLS catalysts from the as-prepared GaP nanowires was possible with Sn catalysts but not with Au catalysts. The photoresponses of both Sn- and Au-seeded GaP nanowire films were collected and examined under 100â¯mWâ¯cmâ2 white light illumination. Au-seeded nanowire films exhibited strong n-type characteristics when measured in nonaqueous electrolyte with ferrocene/ferricenium as the redox species while Sn-seeded nanowires showed behavior consistent with degenerate n-type doping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 482, 15 January 2018, Pages 36-43
Journal: Journal of Crystal Growth - Volume 482, 15 January 2018, Pages 36-43
نویسندگان
Sudarat Lee, Wen Wen, Quintin Cheek, Stephen Maldonado,