کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489926 | 1524377 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Experimental study of growth mechanism of GaAs microchannel epitaxy - Study of pinning effect of Si-doping
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Experimental study of growth mechanism of GaAs microchannel epitaxy - Study of pinning effect of Si-doping Experimental study of growth mechanism of GaAs microchannel epitaxy - Study of pinning effect of Si-doping](/preview/png/5489926.png)
چکیده انگلیسی
The shape of the spiral steps was used to experimentally estimate the surface supersaturation of GaAs microchannel epitaxy, whose atomically-flat surface is suitable for the step observation. In the Si-doped sample, the vertical growth rate was found to have a strong relation to the surface supersaturation. The vertical growth is greatly suppressed below a critical value of 0.17%, and it linearly increases with the supersaturation above the value. The mechanism is ascribed to the pinning effects of the dopants on the surface. Reference of the non-doped sample shows that the vertical growth rate is simply proportional to the surface supersaturation, and that the pinning effect disappears.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 452, 15 October 2016, Pages 240-243
Journal: Journal of Crystal Growth - Volume 452, 15 October 2016, Pages 240-243
نویسندگان
Y. Mizuno, M. Tomita, H. Takakura, M. Iwakawa, D. Kambayashi, T. Maruyama, S. Naritsuka,