کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489926 | 1524377 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Experimental study of growth mechanism of GaAs microchannel epitaxy - Study of pinning effect of Si-doping
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The shape of the spiral steps was used to experimentally estimate the surface supersaturation of GaAs microchannel epitaxy, whose atomically-flat surface is suitable for the step observation. In the Si-doped sample, the vertical growth rate was found to have a strong relation to the surface supersaturation. The vertical growth is greatly suppressed below a critical value of 0.17%, and it linearly increases with the supersaturation above the value. The mechanism is ascribed to the pinning effects of the dopants on the surface. Reference of the non-doped sample shows that the vertical growth rate is simply proportional to the surface supersaturation, and that the pinning effect disappears.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 452, 15 October 2016, Pages 240-243
Journal: Journal of Crystal Growth - Volume 452, 15 October 2016, Pages 240-243
نویسندگان
Y. Mizuno, M. Tomita, H. Takakura, M. Iwakawa, D. Kambayashi, T. Maruyama, S. Naritsuka,