Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Impurities; A1. Surfactants; A1 Point defects; A1. Diffusion of In, P, and Zn; B2. Semiconducting gallium arsenide;
مقالات ISI B2 آرسنید گالیوم نیمه هادی (ترجمه نشده)
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Overcoming Ehrlich-Schwöbel barrier in (1â¯1â¯1)A GaAs molecular beam epitaxy
Keywords: B2 آرسنید گالیوم نیمه هادی; B2. Semiconducting gallium arsenide; A3. Molecular beam epitaxy; A1. Surface processes; A1. Atomic force microscopy; A1. Diffusion; A1. Nucleation; A1. Recrystallization;
Strain relaxation and compositional separation during growth of InGaAs/GaAs(001)
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide;
Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet Epitaxy
Keywords: B2 آرسنید گالیوم نیمه هادی; A3. Molecular beam epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide; A1. Low dimensional structures;
A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting gallium arsenide;
Suppression of twin generation in the growth of GaAs on Ge (111) substrates
Keywords: B2 آرسنید گالیوم نیمه هادی; A1.Volume defects; A1. X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting III-V materials; B3. Solar cells;
Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Nanostructures; A1. Crystal morphology; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide;
In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells
Keywords: B2 آرسنید گالیوم نیمه هادی; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B2. Semiconducting III-V materials; B2. Semiconducting gallium arsenide; B2. Semiconducting indium gallium phosphide; B3. Solar cells;
(GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA)
Keywords: B2 آرسنید گالیوم نیمه هادی; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials; B2. Semiconducting gallium arsenide;
Behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces
Keywords: B2 آرسنید گالیوم نیمه هادی; A3. Migration enhanced epitaxy; A1. Reflection high energy electron diffraction; A1. Surface processes; A1. Surface structure; B2. Semiconducting gallium arsenide; A3. Molecular beam epitaxy;
Experimental determination of dependence of vertical growth rate on surface supersaturation in GaAs(001) microchannel epitaxy and growth optimization
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. BCF theory; A1. Nucleation; A1. Surface supersaturation; A3. Liquid phase epitaxy; A3. Microchannel epitaxy; B2. Semiconducting gallium arsenide
Experimental study of growth mechanism of GaAs microchannel epitaxy - Study of pinning effect of Si-doping
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Doping; A1. Impurities; A3. Liquid phase epitaxy; B1. Gallium compounds; B2. Semiconducting gallium arsenide;
Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Defects; A1. Stresses; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B2. Semiconducting III–V materials; B2. Semiconducting gallium arsenide
Parameters influencing interfacial morphology in GaAs/Ge superlattices grown by metal organic chemical vapor deposition
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Interfaces; A3. Metalorganic chemical vapor deposition; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium; B2. Semiconducting III-V materials;
Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Planar defects; A3. Metalorganic chemical vapor deposition; B2. Semiconducting gallium arsenide; B2. Semiconducting III-V materials;
CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Etching; A1. Defects; A3. Metalorganic vapor phase epitaxy; B1. Halides; B2. Semiconducting gallium arsenide
Efficient nitrogen incorporation in GaAs using novel metal organic As–N precursor di-tertiary-butyl-arsano-amine (DTBAA)
Keywords: B2 آرسنید گالیوم نیمه هادی; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials; B2. Semiconducting gallium arsenide
Optical properties of AlxGa1âxAs/GaAs superlattice solar cells
Keywords: B2 آرسنید گالیوم نیمه هادی; A3. Molecular beam epitaxy; A3. Superlattices; B2. Semiconducting gallium arsenide; B3. Solar cells;
Recombination current in AlGaAs/GaAs superlattice solar-cells grown by molecular beam epitaxy
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Characterization; A3. Molecular beam epitaxy; A3. Superlattices; B2. Semiconducting gallium arsenide; B2. Semiconducting III-V materials; B3. Solar cells;
Photoluminescence evolution in GaAs/AlGaAs core/shell nanowires grown by MOCVD: Effects of core growth temperature and substrate orientation
Keywords: B2 آرسنید گالیوم نیمه هادی; B2. Semiconducting gallium arsenide; A3. Metalorganic chemical vapor deposition; A1. Photoluminescence; A1. Defects
Effects of incident UV light on the surface morphology of MBE grown GaAs
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Reflection high energy electron diffraction; A1. Roughening; A1. Surfaces; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide;
Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer
Keywords: B2 آرسنید گالیوم نیمه هادی; A3. Thin film; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting III-V materials; B2. Semiconducting silicon;
Influences of two-step growth and off-angle Ge substrate on crystalline quality of GaAs buffer layers grown by MOVPE
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. High resolution X-ray diffraction; A3. Metaloganic vapor phase epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium
GaAs nanowires grown by Ga-assisted chemical beam epitaxy: Substrate preparation and growth kinetics
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Crystal structure; A3. Chemical beam epitaxy; A3. Vapor–liquid–solid; B1. Nanowires; B2. Semiconducting gallium arsenide
Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD
Keywords: B2 آرسنید گالیوم نیمه هادی; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III–V materials; B2. Semiconducting gallium arsenide; B2. Semiconducting indium phosphide
Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. High-resolution X-ray diffraction; A1. Radiation; A3. Metal–organic vapor-phase epitaxy; B1. Nitrides; B2. Semiconducting gallium arsenide
Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Stresses; A1. Nanobeam electron diffraction; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting gallium arsenide
Growth of Ga(AsBi) on GaAs by continuous flow MOVPE
Keywords: B2 آرسنید گالیوم نیمه هادی; A3. Metalorganic vapor phase epitaxy; B1. Bismuth compounds; B2. Semiconducting III–V materials; B2. Semiconducting gallium arsenide; B2. Semiconducting ternary compounds
Analysis of the VIS–NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Bismuth compounds; A1. Crystal morphology; A1. Refractive index; A3. Metal organic vapor phase epitaxy; B2. Semiconducting gallium arsenide
Defect selective etching of GaAsyP1ây photovoltaic materials
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Defects; A1. Etching; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting III-V materials; B3. Solar cells;
Characterization of 4Â in VGF-GaAs single crystals grown in a heater-magnet module
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Magnetic fields; A1. Segregation; A2. Gradient freeze technique; B2. Semiconducting gallium arsenide;
Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1−yBiy
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. High resolution x-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Bismuth compounds; B2. Semiconducting III–V materials; B2. Semiconducting ternary compounds; B2. Semiconducting gallium arsenide
Unveiling transient GaAs/GaP nanowire growth behavior using group V oscillations
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Diffusion; A1. Growth models; A1. Nucleation; A1. Semiconducting III-V materials; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide;
Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Semiconducting gallium arsenide;
Low temperature growth of GaAs1âyBiy epitaxial layers
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. High resolution X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Bismuth compounds; B2. Semiconducting III-V materials; B2. Semiconducting ternary compounds; B2. Semiconducting Gallium Arsenide;
Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE)
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Low dimensional structures; A1. Nanostructures; A1. Growth models; A3. Hydride vapor phase epitaxy; B2. Semiconducting gallium arsenide;
Surfactant effects on GaAs-Ge heterostructures
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Defects; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium; B3. Solar cells; Surfactant Diffusion;
Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Doping; A1. Point defects; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide
Sb irradiation effect on growth of GaAs thin film on Si (111) substrate
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Crystal morphology; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting gallium arsenide
Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Quantum wells; A3. Superlattices; B2. Semiconducting gallium arsenide; B2. Semiconducting silicon;
Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Surface structure; A1. Nanostructures; A1. Atomic force microscopy; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide
MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Characterization; A1. Doping; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B3. High electron mobility transistors
Crystalline and electrical characteristics of C60 uniformly doped GaAs layers
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Doping; A1. Transmission electron microscopy; A1. X-ray diffraction; A3. Migration enhanced epitaxy; B1. Fullerenes; B2. Semiconducting gallium arsenide;
Self-assembly of Ga droplets attached to GaAs quantum dots
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Low dimensional structures; A3. Molecular beam epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide
Selective epitaxial growth of GaAs by current controlled liquid phase epitaxy
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Electromigration; A3. Current controlled liquid phase epitaxy; A3. Liquid phase epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide
Effect of rapid thermal annealing on behavior of nitrogen in GaAsN alloys
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Defects; Diffusion; B1. Nitrides; B2. Semiconducting gallium arsenide
Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Diffusion; A1. Low dimensional structures; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide
Ab initio-based approach to incorporation of N atoms on GaAs(001) surfaces
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Adsorption; A1. Computer simulation; A1. Surface structure; A3. Atomic layer epitaxy; B1. Nitrides; B2. Semiconducting gallium arsenide
Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si(111)
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Crystal structure; A1. Nanowires; A3. Contact angle; A3. Molecular beam epitaxy; A3. Self-catalyzed; B2. Semiconducting gallium arsenide
Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy
Keywords: B2 آرسنید گالیوم نیمه هادی; A1. Crystal structure; A3. Chemical beam epitaxy; A3. Vapor–liquid–solid; B1. Nanowires; B2. Semiconducting gallium arsenide