Crystalline and electrical characteristics of C60 uniformly doped GaAs layers

► Fullerene doped GaAs layers are grown by a MEE method. ► In HRTEM images, the C60 doped GaAs layers have no defect. ► The EELS spectrum indicates that the LUMO of C60 molecules is active even in GaAs lattices. ► At low temperatures, the resonant excitation between C60 traps and GaAs bands may occur.